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NTP52N10G

MOSFET 100V 60A N-Channel

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SeekIC No. : 00162188 Detail

NTP52N10G: MOSFET 100V 60A N-Channel

NTP52N10G Data Sheet

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Part Number:
NTP52N10G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 52 A
Resistance Drain-Source RDS (on) : 30 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 30 mOhms
Continuous Drain Current : 52 A


Parameters:

Technical/Catalog InformationNTP52N10G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs30 mOhm @ 26A, 10V
Input Capacitance (Ciss) @ Vds 3150pF @ 25V
Power - Max214W
PackagingTube
Gate Charge (Qg) @ Vgs135nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTP52N10G
NTP52N10G
NTP52N10GOS ND
NTP52N10GOSND
NTP52N10GOS



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