MOSFET 24V 125A N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 24 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 18.6 A | ||
Resistance Drain-Source RDS (on) : | 4.6 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Parameter | Symbol | Value | Unit |
Drain−to−Source Voltage | VDSS | 24 | Vdc |
Gate−to−Source Voltage − Continuous | VGS | ±20 | Vdc |
Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25 Drain Current − Continuous @ TC = 25, Chip Continuous @ TC = 25, Limited by Package Continuous @ TA = 25, Limited by Wires Single Pulse (tp = 10 s) |
RJC PD ID ID ID ID |
1.1 113.6 125 120.5 95 250 |
/W W A A A A |
Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25 Drain Current − Continuous @ TA = 25 |
RJA PD ID |
46 2.72 18.6 |
/W W A |
Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25 Drain Current − Continuous @ TA = 25 |
RJA PD ID |
63 1.98 15.9 |
/W W A |
Operating and Storage Temperature Range | TJ, Tstg | −55 to 150 |
|
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25 (VDD = 50 Vdc, VGS = 10 Vdc, IL = 15.5 Apk, L = 1 mH, RG = 25 ) |
EAS | 120 | mJ |
Maximum Lead Temperature for Soldering Purposes, 1/8, from Case for 10 Seconds |
TL | 260 |