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NTP125N02R, NTP125N02RG, NTP12N50

NTP125N02R, NTP125N02RG, NTP12N50 Selling Leads, Datasheet

MFG:ON Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:TO-  D/C:07+

NTP125N02RG Picture

NTP125N02R, NTP125N02RG, NTP12N50 Datasheet download

Five Points

Part Number: NTP125N02RG

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: TO-

D/C: 07+

Description: MOSFET PWR N-CH 125A 24V TO220AB

 

 
 
 
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  • NTP125N02RG

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  • NTP2955G

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About NTP125N02R

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Datasheet: NTP125N02R

File Size: 70494 KB

Manufacturer: ONSEMI [ON Semiconductor]

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  • NTP125N02RG

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  • NTP2955G

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About NTP10N40

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Datasheet: NTP10N40

File Size: 45990 KB

Manufacturer: ON SEMICONDUCTOR

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  • NTP18N06G

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  • Umos Electronic(HK) CO.,LTD.   China
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    (11)
  • NTP18N06LG

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  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
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    Fax: 0086-755-61174144
    (11)
  • NTP27N06G

  • Vendor: ON Pack: TO D/C: 08+& Qty: 30000 Note: N Channel  Adddate: 2024-12-21
  • Inquire Now
  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
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    Fax: 0086-755-61174144
    (11)
  • NTP2955G

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  • NTP2955G

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  • WIN-WIN Electronics Co., Ltd.   China
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    (2)

About NTP10N40

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Datasheet: NTP10N40

File Size: 45990 KB

Manufacturer: ON SEMICONDUCTOR

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NTP125N02R Maximum Ratings

 Parameter  Symbol  Value  Unit
 Drain−to−Source Voltage  VDSS  24  Vdc
 Gate−to−Source Voltage − Continuous  VGS  ±20  Vdc
 Thermal Resistance − Junction−to−Case
Total Power Dissipation @ TC = 25
Drain Current −
Continuous @ TC = 25, Chip
Continuous @ TC = 25, Limited by Package
Continuous @ TA = 25, Limited by Wires
Single Pulse (tp = 10 s)
 RJC
PD
ID
ID
ID
ID
 1.1
113.6
125
120.5
95
250
 /W
W
A
A
A
A
 Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25
Drain Current − Continuous @ TA = 25
 RJA
PD
ID
 46
2.72
18.6
 /W
W
A
 Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25
Drain Current − Continuous @ TA = 25
 RJA
PD
ID
 63
1.98
15.9
 /W
W
A
 Operating and Storage Temperature Range  TJ, Tstg  −55 to
150
 
 Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25
(VDD = 50 Vdc, VGS = 10 Vdc, IL = 15.5 Apk,
L = 1 mH, RG = 25 )
 EAS  120  mJ
 Maximum Lead Temperature for Soldering
Purposes, 1/8, from Case for 10 Seconds
 TL  260  

NTP125N02R Features

• Planar HD3e Process for Fast Switching Performance
• Body Diode for Low trr and Qrr and Optimized for Synchronous Operation
• Low Ciss to Minimize Driver Loss
• Optimized Qgd and RDS(on) for Shoot−through Protection
• Low Gate Charge

NTP125N02RG Parameters

Technical/Catalog InformationNTP125N02RG
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25° C15.9A
Rds On (Max) @ Id, Vgs4.6 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 3440pF @ 20V
Power - Max1.98W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs28nC @ 4.5V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTP125N02RG
NTP125N02RG
NTP125N02RGOS ND
NTP125N02RGOSND
NTP125N02RGOS

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