MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 3 LEAD STANDARD D/C:08+/09+
NTP30N20G, NTP35N15, NTP35N15G Datasheet download
Category: Discrete Semiconductor Products
MFG: ON Semiconductor
Package Cooled: TO-220 3 LEAD STANDARD
D/C: 08+/09+
Description: MOSFET N-CH 200V 30A TO220AB
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PDF/DataSheet Download
Datasheet: NTP10N40
File Size: 45990 KB
Manufacturer: ON SEMICONDUCTOR
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NTP35N15
File Size: 75648 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NTP10N40
File Size: 45990 KB
Manufacturer: ON SEMICONDUCTOR
Download : Click here to Download
| Technical/Catalog Information | NTP30N20G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 30A |
| Rds On (Max) @ Id, Vgs | 81 mOhm @ 15A, 10V |
| Input Capacitance (Ciss) @ Vds | 2335pF @ 25V |
| Power - Max | 214W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 100nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NTP30N20G NTP30N20G NTP30N20GOS ND NTP30N20GOSND NTP30N20GOS |
| Rating | Symbol | Value | Unit |
| Drain−to−Source Voltage | VDSS | 150 | Vdc |
| Drain−to−Source Voltage (RGS = 1.0 MW) | VDGR | 150 | Vdc |
| Gate−to−Source Voltage − Continuous − Non−Repetitive (tp10 ms) |
VGS VGSM |
±20 ±40 |
Vdc |
| Drain Current − Continuous @ TA 25°C − Continuous @ TA 100°C − Pulsed (Note 1.) |
ID ID IDM |
37 23 111 |
Adc |
| Total Power Dissipation @ TA = 25°C Derate above 25°C |
PD | 178 1.43 |
W W/°C |
| Operating and Storage Temperature Range | TJ, Tstg | −55 to +150 |
°C |
| Single Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL(pk) = 21.6 A, L = 3.0 mH, RG = 25 W) |
EAS | 700 | mJ |
| Thermal Resistance − Junction−to−Case − Junction−to−Ambient |
RJC RJA |
0.7 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds |
TL | 260 | °C |
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