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NTD32N06L, NTD32N06L-001, NTD32N06L-1

Table of contents:
Info of NTD32N06L
Info of NTD32N06L-001
Info of NTD32N06L-1

NTD32N06L, NTD32N06L-001, NTD32N06L-1 Selling Leads, Datasheet

MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-252 D/C:07+

NTD32N06L, NTD32N06L-001, NTD32N06L-1 Datasheet download

Five Points

Part Number: NTD32N06L

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: TO-252

D/C: 07+

Description: MOSFET N-CH 60V 32A TO-251A

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NTD32N06L Parameters

Technical/Catalog Information	NTD32N06L
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	32A
Rds On (Max) @ Id, Vgs	28 mOhm @ 16A, 5V
Input Capacitance (Ciss) @ Vds	1700pF @ 25V
Power - Max	1.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	50nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTD32N06L NTD32N06L

NTD32N06L Maximum Ratings

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	V_DSS	60	Vdc
Drain−to−Gate Voltage (R_GS = 10 M)	V_DGR	60	Vdc
Gate−to−Source Voltage − Continuous − Non−repetitive (tp10 ms)	V_GSV_GS	±20 ±30	Vdc
Drain Current − Continuous @ T_A = 25°C − Continuous @ T_A = 100°C − Single Pulse (tp10 s)	I_DI_D I_DM	32 22 90	Adc Apk
Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ T_A= 25°C (Note 1) Total Power Dissipation @ T_A= 25°C (Note 2)	P_D	93.75 0.625 2.88 1.5	W W/ WW
Operating and Storage Temperature Range	T_J, T_stg	−55 to 175
Single Pulse Drain−to−Source Avalanche Energy − Starting T_J = 25°C (VDD = 25 Vdc, V_GS = 10 Vdc, L = 1.0 mH, I_L(pk) = 7.75 A, V_DS = 60 Vdc)	E_AS	313	mJ
Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2)	R_JC R_JA R_JA	1.6 52 100	/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds	T_L	260

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using minimum recommended pad size.

NTD32N06L Features

• Smaller Package than MTB30N06VL
• Lower RDS(on), VDS(on), and Total Gate Charge
• Lower and Tighter V_SD
• Lower Diode Reverse Recovery Time
• Lower Reverse Recovery Stored Charge

NTD32N06L Typical Application

• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits

NTD32N06L-001 Parameters

Technical/Catalog Information	NTD32N06L-001
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	32A
Rds On (Max) @ Id, Vgs	28 mOhm @ 16A, 5V
Input Capacitance (Ciss) @ Vds	1700pF @ 25V
Power - Max	1.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	50nC @ 5V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTD32N06L 001 NTD32N06L001 NTD32N06L 001OS ND NTD32N06L001OSND NTD32N06L-001OS

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