NTD20N03L27 Selling Leads, Price trend , ON Semiconductor, NTD20N03L27 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00165032 Detail

NTD20N03L27: MOSFET 30V 20A N-Channel

NTD20N03L27 Data Sheet

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Part Number:: NTD20N03L27
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/23

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	20 A
Resistance Drain-Source RDS (on) :	27 mOhms at 5 V	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	DPAK	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : DPAK
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 27 mOhms at 5 V

Features:

• Pb−Free Packages are Available
• Ultra−Low R_DS(on), Single Base, Advanced Technology
• SPICE Parameters Available
• Diode is Characterized for use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperatures
• High Avalanche Energy Specified
• ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0

Application

• Power Supplies
• Inductive Loads
• PWM Motor Controls
• Replaces MTD20N03L in many Applications

Pinout

Connection Diagram

Specifications

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	V_DSS	30	Vdc
Drain−to−Gate Voltage (R_GS = 1.0 M)	V_DGR	30	Vdc
Gate−to−Source Voltage − Continuous − Non−Repetitive (t_p10 ms)	V_GS V_GS	±20 ±24	Vdc
Drain Current − Continuous @ T_C= 25 − Continuous @ T_C = 100 − Single Pulse (t_p10 s)	I_D I_D I_DM	20 16 60	Adc Apk
Total Power Dissipation @ T_C= 25 Derate above 25 Total Power Dissipation @ T_C= 25 (Note 1)	P_D	70 0.6 1.75	W W/ W
Operating and Storage Temperature Range	T_J, T_stg	−55 to +150
Single Pulse Drain−to−Source Avalanche Energy − Starting T_J= 25 (V_DD = 30 Vdc, V_GS = 5 Vdc, L = 1.0 mH I_L(pk) = 24 A, V_DS = 34 Vdc)	E_AS	288	mJ
Thermal Resistance − Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient (Note 1)	R_JC R_JA R_JA	1.67 100 71.4	/W
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds	T_L	260

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. When surface mounted to an FR4 board using the minimum recommended pad size and repetitive rating; pulse width limited by maximum junction temperature.

Description

This logic level vertical power MOSFET NTD20N03L27 is a general purpose part that provides the "best of design" available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode of NTD20N03L27 has a ideal fast but soft recovery.

NTD20N03L27

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