MOSFET 25V 23A N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 4.5 A | ||
Resistance Drain-Source RDS (on) : | 45 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Tube |
Rating |
Symbol |
Value |
Unit |
Drain−to−Source Voltage |
VDSS |
25 |
Vdc |
Gate−to−Source Voltage − Continuous |
VGS |
±20 |
Vdc |
Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25 Drain Current − Continuous @ TC = 25, Chip − Continuous @ TC = 25,Limited by Package − Single Pulse |
RJC PD ID ID IDM |
5.6 22.3 23 17.1 40 |
/W W A A A |
Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25 Drain Current − Continuous @ TA = 25 |
RJA PD ID |
76 1.64 4.5 |
/W W A |
Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25 Drain Current − Continuous @ TA = 25 |
RJA PD ID |
110 1.14 3.8 |
/W W A |
Operating and Storage Temperature Range |
TJ, Tstg |
−55 to +150 |
|
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds |
TL |
260 |
|