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NSS30071MR6T1G, NSS30100LT1G, NSS30101LT1G

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Info of NSS30071MR6T1G
Info of NSS30100LT1G
Info of NSS30101LT1G

NSS30071MR6T1G, NSS30100LT1G, NSS30101LT1G Selling Leads, Datasheet

MFG:ON Semiconductor (VA) Category:Discrete Semiconductor Products D/C:07+08+

NSS30071MR6T1G, NSS30100LT1G, NSS30101LT1G Picture

NSS30071MR6T1G, NSS30100LT1G, NSS30101LT1G Datasheet download

Five Points

Part Number: NSS30071MR6T1G

Category: Discrete Semiconductor Products

MFG: ON Semiconductor (VA)

Package Cooled:

D/C: 07+08+

Description: TRANSISTOR NPN 1A 30V SOT-23

Price Break

1
25
100
250
500
1000

Unit Price

.55000
.41800
.36300
.31900
.29700
.23100

Extended Price

0.55
10.45
36.30
79.75
148.50
231.00

(All prices are in USD) Prices for reference only

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NSS30071MR6T1G Parameters

Technical/Catalog Information	NSS30071MR6T1G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	700mA
Power - Max	665mW
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 100mA, 3V
Vce Saturation (Max) @ Ib, Ic	400mV @ 70mA, 700mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SC-74-6, SOT-457, SMT6, SSOT-6, 6-TSOP
Packaging	Cut Tape (CT)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NSS30071MR6T1G NSS30071MR6T1G NSS30071MR6T1GOSCT ND NSS30071MR6T1GOSCTND NSS30071MR6T1GOSCT

NSS30100LT1G Parameters

Technical/Catalog Information	NSS30100LT1G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	1A
Power - Max	710mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 2V
Vce Saturation (Max) @ Ib, Ic	650mV @ 200mA, 2A
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	100nA
Mounting Type	Surface Mount
Package / Case	*
Packaging	Cut Tape (CT)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NSS30100LT1G NSS30100LT1G NSS30100LT1GOSCT ND NSS30100LT1GOSCTND NSS30100LT1GOSCT

NSS30101LT1G Parameters

Technical/Catalog Information	NSS30101LT1G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	1A
Power - Max	710mW
DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic	75mV @ 1mA, 100mA
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	100nA
Mounting Type	Surface Mount
Package / Case	*
Packaging	Cut Tape (CT)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NSS30101LT1G NSS30101LT1G NSS30101LT1GOSCT ND NSS30101LT1GOSCTND NSS30101LT1GOSCT

NSS30101LT1G General Description

ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.

NSS30101LT1G Maximum Ratings

Rating	Symbol	Max	Unit
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak	V_CEO V_CBO V_EBO I_C I_CM	30 50 5.0 1.0 2.0	Vdc Vdc Vdc A A

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