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NSS20201MR6T1G, NSS20300MR6T1G, NSS20501UW3T2G

NSS20201MR6T1G, NSS20300MR6T1G, NSS20501UW3T2G Selling Leads, Datasheet

MFG:ON Semiconductor (VA)  Category:Discrete Semiconductor Products  Package Cooled:TSOP-6  D/C:07

NSS20501UW3T2G Picture

NSS20201MR6T1G, NSS20300MR6T1G, NSS20501UW3T2G Datasheet download

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Part Number: NSS20501UW3T2G

Category: Discrete Semiconductor Products

MFG: ON Semiconductor (VA)

Package Cooled: TSOP-6

D/C: 07

Description: TRANS NPN 20V 7A 3-WDFN

Price Break

1
25
100
250
500
1000

Unit Price

.60000
.51000
.45000
.42000
.37500
.30000

Extended Price

0.60
12.75
45.00
105.00
187.50
300.00

(All prices are in USD) Prices for reference only
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About NSS20201MR6T1G

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Datasheet: NSS20201MR6T1G

File Size: 39280 KB

Manufacturer: ONSEMI [ON Semiconductor]

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About NSS20300MR6T1G

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Datasheet: NSS20300MR6T1G

File Size: 40183 KB

Manufacturer: ONSEMI [ON Semiconductor]

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About NSS12200WT1G

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Datasheet: NSS12200WT1G

File Size: 46436 KB

Manufacturer: ON SEMICONDUCTOR

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NSS20201MR6T1G Parameters

Technical/Catalog InformationNSS20201MR6T1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)20V
Current - Collector (Ic) (Max)2A
Power - Max780mW
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic25mV @ 10mA, 100mA
Frequency - Transition200MHz
Current - Collector Cutoff (Max)100nA
Mounting TypeSurface Mount
Package / Case6-TSOP
PackagingCut Tape (CT)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NSS20201MR6T1G
NSS20201MR6T1G
NSS20201MR6T1GOSCT ND
NSS20201MR6T1GOSCTND
NSS20201MR6T1GOSCT

NSS20201MR6T1G Maximum Ratings

Rating Symbol Max Unit
Collector-Emitter Voltage VCEO 20 V
Collector-Base Voltage VCBO 40 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current − Continuous IC 2.0 A
Collector Current − Peak ICM 3.0 A

NSS20201MR6T1G Features

ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.

NSS20300MR6T1G Parameters

Technical/Catalog InformationNSS20300MR6T1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)20V
Current - Collector (Ic) (Max)3A
Power - Max1.75W
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A, 1.5V
Vce Saturation (Max) @ Ib, Ic320mV @ 20mA, 2A
Frequency - Transition100MHz
Current - Collector Cutoff (Max)100nA
Mounting TypeSurface Mount
Package / Case6-TSOP
PackagingCut Tape (CT)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NSS20300MR6T1G
NSS20300MR6T1G
NSS20300MR6T1GOSCT ND
NSS20300MR6T1GOSCTND
NSS20300MR6T1GOSCT

NSS20300MR6T1G General Description

ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.

NSS20300MR6T1G Maximum Ratings

Rating Symbol Max Unit
Collector-Emitter Voltage VCEO -20 V
Collector-Base Voltage VCBO -30 V
Emitter-Base Voltage VEBO

-6.0

V
Collector Current - Continuous IC -3.0 A
Collector Current - Peak ICM -5.0 A
Electrostatic Discharge ESD HBM Class 3B
MM Class C

NSS20501UW3T2G Parameters

Technical/Catalog InformationNSS20501UW3T2G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)20V
Current - Collector (Ic) (Max)5A
Power - Max875mW
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic125mV @ 400mA, 4A
Frequency - Transition150MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseWDFN-3
PackagingDigi-Reel?
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NSS20501UW3T2G
NSS20501UW3T2G
NSS20501UW3T2GOSDKR ND
NSS20501UW3T2GOSDKRND
NSS20501UW3T2GOSDKR

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