NSS30101LT1G

Transistors Bipolar (BJT) 1A 30V Low VCEsat

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NSS30101LT1G: Transistors Bipolar (BJT) 1A 30V Low VCEsat

floor Price/Ceiling Price

US $ .19~.36 / Piece | Get Latest Price
Part Number:
NSS30101LT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
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  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.36
  • $.27
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  • $.19
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 30 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 300 at 50 mA at 5 V Configuration : Single
Maximum Operating Frequency : 100 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-23
Packaging : Reel    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 5 V
Package / Case : SOT-23
Maximum Operating Frequency : 100 MHz (Min)
Maximum DC Collector Current : 1 A
Collector- Emitter Voltage VCEO Max : 30 V
DC Collector/Base Gain hfe Min : 300 at 50 mA at 5 V


Specifications

Rating Symbol Max Unit
Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current − Continuous

Collector Current − Peak
VCEO

VCBO

VEBO

IC

ICM
30

50

5.0

1.0

2.0
Vdc

Vdc

Vdc

A

A



Description

ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors NSS30101LT1G are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

NSS30101LT1G's Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.




Parameters:

Technical/Catalog InformationNSS30101LT1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)30V
Current - Collector (Ic) (Max)1A
Power - Max710mW
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic75mV @ 1mA, 100mA
Frequency - Transition100MHz
Current - Collector Cutoff (Max)100nA
Mounting TypeSurface Mount
Package / Case*
PackagingCut Tape (CT)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NSS30101LT1G
NSS30101LT1G
NSS30101LT1GOSCT ND
NSS30101LT1GOSCTND
NSS30101LT1GOSCT



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