NSS20201MR6T1G

Transistors Bipolar (BJT) 2A 20V Low VCEsat

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NSS20201MR6T1G: Transistors Bipolar (BJT) 2A 20V Low VCEsat

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US $ .08~.09 / Piece | Get Latest Price
Part Number:
NSS20201MR6T1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~3000
  • 3000~3700
  • 3700~5000
  • 5000~10000
  • Unit Price
  • $.09
  • $.09
  • $.08
  • $.08
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 20 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 2 A
DC Collector/Base Gain hfe Min : 300 at 1 mA at 5 V Configuration : Single Quad Collector
Maximum Operating Frequency : 200 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : TSOP
Packaging : Reel    

Description

Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 20 V
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 5 V
Configuration : Single Quad Collector
Package / Case : TSOP
Maximum DC Collector Current : 2 A
Maximum Operating Frequency : 200 MHz (Min)
DC Collector/Base Gain hfe Min : 300 at 1 mA at 5 V


Features:

ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.




Specifications

Rating Symbol Max Unit
Collector-Emitter Voltage VCEO 20 V
Collector-Base Voltage VCBO 40 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current − Continuous IC 2.0 A
Collector Current − Peak ICM 3.0 A



Parameters:

Technical/Catalog InformationNSS20201MR6T1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)20V
Current - Collector (Ic) (Max)2A
Power - Max780mW
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic25mV @ 10mA, 100mA
Frequency - Transition200MHz
Current - Collector Cutoff (Max)100nA
Mounting TypeSurface Mount
Package / Case6-TSOP
PackagingCut Tape (CT)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NSS20201MR6T1G
NSS20201MR6T1G
NSS20201MR6T1GOSCT ND
NSS20201MR6T1GOSCTND
NSS20201MR6T1GOSCT



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