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NE94433-T1B, NE94433-T1B-A, NE97733

NE94433-T1B, NE94433-T1B-A, NE97733 Selling Leads, Datasheet

MFG:NEC  Category:Discrete Semiconductor Products  Package Cooled:SOT-23  D/C:06+

NE94433-T1B Picture

NE94433-T1B, NE94433-T1B-A, NE97733 Datasheet download

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Part Number: NE94433-T1B

Category: Discrete Semiconductor Products

MFG: NEC

Package Cooled: SOT-23

D/C: 06+

Description: TRANSISTOR NPN OSC FT=2GHZ SO

 

 
 
 
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About NE94433-T1B

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Datasheet: NE94433-T1B

File Size: 59677 KB

Manufacturer: NEC [NEC]

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About NE944

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Datasheet: NE944

File Size: 59677 KB

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Datasheet: NE97733

File Size: 47025 KB

Manufacturer: NEC [NEC]

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NE94433-T1B Parameters

Technical/Catalog InformationNE94433-T1B
VendorNEC (VA)
CategoryDiscrete Semiconductor Products
Frequency - Transition2GHz
Noise Figure (dB Typ @ f)-
Current - Collector (Ic) (Max)50mA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 5mA, 10V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15V
Gain-
Power - Max150mW
Compression Point (P1dB)-
Package / CaseSOT-23
PackagingCut Tape (CT)
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NE94433 T1B
NE94433T1B
NE94433CT ND
NE94433CTND
NE94433CT

NE94433-T1B-A Parameters

Technical/Catalog InformationNE94433-T1B-A
VendorNEC
CategoryDiscrete Semiconductor Products
Frequency - Transition2GHz
Noise Figure (dB Typ @ f)-
Current - Collector (Ic) (Max)50mA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 5mA, 10V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15V
Gain-
Power - Max150mW
Compression Point (P1dB)-
Package / CaseSOT-23
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NE94433 T1B A
NE94433T1BA
NE94433B ATR ND
NE94433BATRND
NE94433B-ATR

NE97733 General Description

The NE97733 PNP silicon transistor is designed for ultrahigh speed current mode switching applications and microwave amplifiers up to 3.5 GHz. The NE97733 offers excellent performance and reliability at low cost.

NE97733 Maximum Ratings

SYMBOLS
PARAMETERS
UNITS
RATINGS
VCEO
Collector to Emitter Voltage
V

-20

VCBO
Collector to Base Voltage
V
-12
VEBO
Emitter to Base Voltage
V
-3
IC
Collector Current
mA
-50
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-55 to +150
Note:
1. Operation in excess of any one of these parameters may resultin permanent damage.

NE97733 Features

• HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP
• HIGH SPEED SWITCHING CHARACTERISTICS
• NPN COMPLIMENT AVAILABLE: NE68133
• HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB at 1 GHz

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