MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:10 D/C:SOP-8
NDS6961, NDS7002A, NDS7002AG949 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor (VA)
Package Cooled: 10
D/C: SOP-8
Description: MOSFET N-CH 60V 280MA SOT-23
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PDF/DataSheet Download
Datasheet: NDS02ZG-M6
File Size: 320036 KB
Manufacturer: POWER-ONE [Power-One]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDS7002A
File Size: 551126 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDS02ZG-M6
File Size: 320036 KB
Manufacturer: POWER-ONE [Power-One]
Download : Click here to Download
| Technical/Catalog Information | NDS7002A |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 280mA |
| Rds On (Max) @ Id, Vgs | 2 Ohm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 50pF @ 25V |
| Power - Max | 300mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | SOT-23 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDS7002A NDS7002A NDS7002ADKR ND NDS7002ADKRND NDS7002ADKR |
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
| Symbol | Parameter | 2N7000 | 2N7002 | NDS7002A | Units |
| VDSS | Drain-Source Voltage | 60 | V | ||
| VDGR | Drain-Gate Voltage (RGS 1 M) | 60 | V | ||
| VGSS | Gate-Source Voltage - Continuous - Non Repetitive (tp < 50s) |
±20 | V | ||
| ±40 | |||||
| ID | Maximum Drain Current - Continuous - Pulsed |
200 | 115 | 280 | mA |
| 500 | 800 | 1500 | |||
| PD | Maximum Power Dissipation Derated above 25 |
400 | 200 | 300 | mW |
| 3.2 | 1.6 | 2.4 | mW/ | ||
| TJ,TSTG | Operating and Storage Temperature Range | -55 to 150 | -65 to 150 | ||
| TL | Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds |
300 | |||
| THERMAL CHARACTERISTICS | |||||
| RJA | Thermal Resistance, Junction-to-Ambient | 312.5 | 625 | 417 | /W |
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