NDB710B, NDB710BE, NDB712BE Selling Leads, Datasheet
MFG:MOT/ON Package Cooled:09+ D/C:TO-
NDB710B, NDB710BE, NDB712BE Datasheet download
Part Number: NDB710B
MFG: MOT/ON
Package Cooled: 09+
D/C: TO-
MFG:MOT/ON Package Cooled:09+ D/C:TO-
NDB710B, NDB710BE, NDB712BE Datasheet download
MFG: MOT/ON
Package Cooled: 09+
D/C: TO-
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PDF/DataSheet Download
Datasheet: NDB710B
File Size: 75783 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDB710BE
File Size: 75783 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDB4050
File Size: 68582 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Symbol |
Parameter |
NDP710A NDP710AE NDB710A NDB710AE |
NDP710B NDP710BE NDB710B NDB710BE |
Units |
VDSS |
Drain-Source Voltage |
100 |
V | |
VDGR |
Drain-Gate Voltage (RGS < 1 M) |
100 |
V | |
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) |
± 20 |
V | |
± 40 | ||||
ID |
Drain Current - Continuous - Pulsed |
42 |
40 |
A |
168 |
160 | |||
PD |
Total Power Dissipation Derate above 25°C |
150 |
W | |
1 |
W/ | |||
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
||
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Symbol |
Parameter |
NDP710A NDP710AE NDB710A NDB710AE |
NDP710B NDP710BE NDB710B NDB710BE |
Units |
VDSS |
Drain-Source Voltage |
100 |
V | |
VDGR |
Drain-Gate Voltage (RGS < 1 M) |
100 |
V | |
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) |
± 20 |
V | |
± 40 | ||||
ID |
Drain Current - Continuous - Pulsed |
42 |
40 |
A |
168 |
160 | |||
PD |
Total Power Dissipation Derate above 25°C |
150 |
W | |
1 |
W/ | |||
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
||
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |