NDB508AE, NDB508B, NDB508BE Selling Leads, Datasheet
MFG:MOT/ON Package Cooled:09+ D/C:TO-
NDB508AE, NDB508B, NDB508BE Datasheet download
Part Number: NDB508AE
MFG: MOT/ON
Package Cooled: 09+
D/C: TO-
NDB508AE, NDB508B, NDB508BE
- Table of contents:
Info of NDB508AE
Info of NDB508B
Info of NDB508BE
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About NDB508AE
PDF/DataSheet Download
Datasheet: NDB508AE
File Size: 75207 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About NDB508B
PDF/DataSheet Download
Datasheet: NDB508B
File Size: 75207 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About NDB508BE
PDF/DataSheet Download
Datasheet: NDB508BE
File Size: 75207 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
NDB508AE General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDB508AE Maximum Ratings
|
Symbol |
Parameter |
NDP508A NDP508AE NDB508A NDB508AE |
NDP508B NDP508BE NDB508B NDB508BE |
Units |
|
VDSS |
Drain-Source Voltage |
80 |
V | |
|
VDGR |
Drain-Gate Voltage (RGS 1 M) |
80 |
V | |
|
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) |
± 20 |
V | |
|
± 40 | ||||
|
ID |
Drain Current - Continuous - Pulsed |
19 |
17 |
A |
|
57 |
51 | |||
|
PD |
Total Power Dissipation Derate above 25°C |
75 |
W | |
|
0.5 |
W/ | |||
|
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
||
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
||
NDB508AE Features
`19 and 17A, 80V. RDS(ON) = 0.08 and 0.10.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
NDB508B General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDB508B Maximum Ratings
|
Symbol |
Parameter |
NDP508A NDP508AE NDB508A NDB508AE |
NDP508B NDP508BE NDB508B NDB508BE |
Units |
|
VDSS |
Drain-Source Voltage |
80 |
V | |
|
VDGR |
Drain-Gate Voltage (RGS 1 M) |
80 |
V | |
|
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) |
± 20 |
V | |
|
± 40 | ||||
|
ID |
Drain Current - Continuous - Pulsed |
19 |
17 |
A |
|
57 |
51 | |||
|
PD |
Total Power Dissipation Derate above 25°C |
75 |
W | |
|
0.5 |
W/ | |||
|
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
||
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
||
NDB508B Features
`19 and 17A, 80V. RDS(ON) = 0.08 and 0.10.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
NDB508BE General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDB508BE Maximum Ratings
|
Symbol |
Parameter |
NDP508A NDP508AE NDB508A NDB508AE |
NDP508B NDP508BE NDB508B NDB508BE |
Units |
|
VDSS |
Drain-Source Voltage |
80 |
V | |
|
VDGR |
Drain-Gate Voltage (RGS 1 M) |
80 |
V | |
|
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) |
± 20 |
V | |
|
± 40 | ||||
|
ID |
Drain Current - Continuous - Pulsed |
19 |
17 |
A |
|
57 |
51 | |||
|
PD |
Total Power Dissipation Derate above 25°C |
75 |
W | |
|
0.5 |
W/ | |||
|
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
||
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
||
NDB508BE Features
`19 and 17A, 80V. RDS(ON) = 0.08 and 0.10.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
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