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NDB506B, NDB506BL, NDB508A

Table of contents:
Info of NDB506B
Info of NDB506BL
Info of NDB508A

NDB506B, NDB506BL, NDB508A Selling Leads, Datasheet

MFG:N/A Package Cooled:96 D/C:TO-263

NDB506B, NDB506BL, NDB508A Datasheet download

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Part Number: NDB506B

MFG: N/A

Package Cooled: 96

D/C: TO-263

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NDB508A General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB508A Maximum Ratings

Symbol	Parameter	NDP508A NDP508AE NDB508A NDB508AE	NDP508B NDP508BE NDB508B NDB508BE	Units
V_DSS	Drain-Source Voltage	80		V
V_DGR	Drain-Gate Voltage (R_GS 1 M)	80		V
V_GSS	Gate-Source Voltage - Continuous - Nonrepetitive (t_P < 50 s)	± 20		V
		± 40
I_D	Drain Current - Continuous - Pulsed	19	17	A
		57	51
P_D	Total Power Dissipation Derate above 25°C	75		W
		0.5		W/
T_J,T_STG	Operating and Storage Temperature Range	-65 to 175
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	275

NDB508A Features

`19 and 17A, 80V. R_DS(ON) = 0.08 and 0.10.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low R_DS(ON).
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.

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