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NDB510BE, NDB6020, NDB6020P

Table of contents:
Info of NDB510BE
Info of NDB6020
Info of NDB6020P

NDB510BE, NDB6020, NDB6020P Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:09+ D/C:TO-

NDB510BE, NDB6020, NDB6020P Datasheet download

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Part Number: NDB510BE

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: 09+

D/C: TO-

Description: MOSFET P-CH 20V 24A D2PAK

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NDB510BE General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB510BE Maximum Ratings

Symbol	Parameter	NDP510A NDP510AE NDB510A NDB510AE	NDP510B NDP510BE NDB510B NDB510BE	Units
V_DSS	Drain-Source Voltage	100		V
V_DGR	Drain-Gate Voltage (RGS < 1 M)	100		V
V_GSS	Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s)	± 20		V
		± 40
I_D	Drain Current - Continuous - Pulsed	15	13	A
		60	52
P_D	Total Power Dissipation Derate above 25°C	75		W
		0.5		W/
T_J,T_STG	Operating and Storage Temperature Range	-65 to 175
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	275

NDB510BE Features

`15 and 13A, 100V. R_DS(ON) = 0.12 and 0.15.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low R_DS(ON).
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.

NDB6020 General Description

These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB6020 Maximum Ratings

Symbol	Parameter	NDP6020	NDB6020	Units
V_DSS	Drain-Source Voltage	20		V
V_DGR	Drain-Gate Voltage (R_GS 1 M)	20		V
V_GSS	Gate-Source Voltage - Continuous	±8		V
I_D	Drain Current - Continuous - Pulsed	35		A
		100
P_D	Total Power Dissipation @ T_C = 25°C Derate above 25°C	60		W
		0.4		W/
T_J,T_STG	Operating and Storage Temperature Range	-65 to 175

NDB6020 Features

`35 A, 20 V. R_DS(ON) = 0.023 @ V_GS= 4.5 V
R_DS(ON) = 0.028 @ V_GS= 2.7 V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R_DS(ON).
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.

NDB6020P Parameters

Technical/Catalog Information	NDB6020P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	24A
Rds On (Max) @ Id, Vgs	50 mOhm @ 12A, 4.5V
Input Capacitance (Ciss) @ Vds	1590pF @ 10V
Power - Max	60W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	35nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NDB6020P NDB6020P NDB6020PCT ND NDB6020PCTND NDB6020PCT

NDB6020P General Description

These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB6020P Maximum Ratings

Symbol	Parameter	NDP6020P	NDB6020P	Units
V_DSS	Drain-Source Voltage	-20		V
V_GSS	Gate-Source Voltage - Continuous	±8		V
I_D	Drain Current - Continuous - Pulsed	-24		A
		-70
P_D	Total Power Dissipation @ TC = 25°C Derate above 25°C	60		W
		0.4		W/
T_J,T_STG	Operating and Storage Temperature Range	-65 to 175

NDB6020P Features

`-24 A, -20 V. R_DS(ON) = 0.05 @ V_GS= -4.5 V.
R_DS(ON) = 0.07 @ V_GS= -2.7 V.
R_DS(ON) = 0.075 @ V_GS= -2.5 V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R_DS(ON).
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.

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