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NDB408BE

Features: ·12 and 11A, 80V. RDS(ON) = 0.16 and 0.20W.·Critical DC electrical parameters specified at elevated temperature.·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.·175°C maximum junction temperature rating.·High density cell design...

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NDB408BE: Features: ·12 and 11A, 80V. RDS(ON) = 0.16 and 0.20W.·Critical DC electrical parameters specified at elevated temperature.·Rugged internal source-drain diode can eliminate the need for an external Z...

NDB408BE Data Sheet

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Part Number:
NDB408BE
Supply Ability:
5000

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Product Details

Description



Features:

·12 and 11A, 80V. RDS(ON) = 0.16 and 0.20W.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design (3 million/in²) for extremely low RDS(ON).
·TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.


Specifications

Symbol
 Parameter
NDP408A NDP408AE
NDB408A NDB408AE
NDP408B NDP408BE
NDB408B NDB408BE
Units
VDSS
 Drain-Source Voltage
60
V
VDGR
 Drain-Gate Voltage (RGS < 1 M)
60
V
VGSS
 Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
± 20
V
± 40
ID
 Drain Current - Continuous
- Pulsed
12
11
A
36
33
PD
 Total Power Dissipation
Derate above 25°C
50
W
0.33
W/
TJ,TSTG
 Operating and Storage Temperature Range
-65 to 175
TL
 Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
275



Description

These N-channel enhancement mode power field effect transistors NDB408BE are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDB408BE is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




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