NDB410B, NDB410BE, NDB505AE Selling Leads, Datasheet
MFG:MOT/ON Package Cooled:6000 D/C:TO-
NDB410B, NDB410BE, NDB505AE Datasheet download
Part Number: NDB410B
MFG: MOT/ON
Package Cooled: 6000
D/C: TO-
NDB410B, NDB410BE, NDB505AE
- Table of contents:
Info of NDB410B
Info of NDB410BE
Info of NDB505AE
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About NDB410B
PDF/DataSheet Download
Datasheet: NDB410B
File Size: 75785 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About NDB410BE
PDF/DataSheet Download
Datasheet: NDB410BE
File Size: 75785 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About NDB4050
PDF/DataSheet Download
Datasheet: NDB4050
File Size: 68582 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
NDB410B General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDB410B Maximum Ratings
|
Symbol |
Parameter |
NDP410A NDP410AE NDB410A NDB410AE |
NDP410B NDP410BE NDB410B NDB410BE |
Units |
|
VDSS |
Drain-Source Voltage |
100 |
V | |
|
VDGR |
Drain-Gate Voltage (RGS < 1 M) |
100 |
V | |
|
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) |
± 20 |
V | |
|
± 40 | ||||
|
ID |
Drain Current - Continuous - Pulsed |
9 |
8 |
A |
|
36 |
32 | |||
|
PD |
Total Power Dissipation Derate above 25°C |
50 |
W | |
|
0.33 |
W/ | |||
|
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
||
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
||
NDB410B Features
`9 and 8A, 100V. RDS(ON) = 0.25 and 0.30.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
NDB410BE General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDB410BE Maximum Ratings
|
Symbol |
Parameter |
NDP410A NDP410AE NDB410A NDB410AE |
NDP410B NDP410BE NDB410B NDB410BE |
Units |
|
VDSS |
Drain-Source Voltage |
100 |
V | |
|
VDGR |
Drain-Gate Voltage (RGS < 1 M) |
100 |
V | |
|
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) |
± 20 |
V | |
|
± 40 | ||||
|
ID |
Drain Current - Continuous - Pulsed |
9 |
8 |
A |
|
36 |
32 | |||
|
PD |
Total Power Dissipation Derate above 25°C |
50 |
W | |
|
0.33 |
W/ | |||
|
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
||
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
||
NDB410BE Features
`9 and 8A, 100V. RDS(ON) = 0.25 and 0.30.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
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