NDB7061L, NDB706AEC, NDB706AL Selling Leads, Datasheet
MFG:MOT/ON Package Cooled:6000 D/C:TO-
NDB7061L, NDB706AEC, NDB706AL Datasheet download
Part Number: NDB7061L
MFG: MOT/ON
Package Cooled: 6000
D/C: TO-
MFG:MOT/ON Package Cooled:6000 D/C:TO-
NDB7061L, NDB706AEC, NDB706AL Datasheet download
MFG: MOT/ON
Package Cooled: 6000
D/C: TO-
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PDF/DataSheet Download
Datasheet: NDB7061L
File Size: 368308 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDB4050
File Size: 68582 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDB4050
File Size: 68582 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Symbol | Parameter |
NDP7060L |
NDB7060L |
Units |
VDSS | Drain-Source Voltage |
60 |
V | |
VDGR | Drain-Gate Voltage (RGS 1 M) |
60 |
V | |
VGSS | Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) |
± 16 |
V | |
± 25 | ||||
ID | Drain Current - Continuous - Pulsed |
60 |
A | |
180 | ||||
PD | Total Power Dissipation @ TC = 25°C Derate above 25°C |
130 |
W | |
0.87 |
W/ | |||
TJ,TSTG | Operating and Storage Temperature Range |
-65 to 175 |