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NDB7061, NDB708, NDB710AL

Table of contents:
Info of NDB7061
Info of NDB708
Info of NDB710AL

NDB7061, NDB708, NDB710AL Selling Leads, Datasheet

MFG:MOT/ON Package Cooled:09+ D/C:09+

NDB7061, NDB708, NDB710AL Datasheet download

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Part Number: NDB7061

MFG: MOT/ON

Package Cooled: 09+

D/C: 09+

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NDB7061 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB7061 Maximum Ratings

Symbol	Parameter	NDP7061	NDB7061	Units
V_DSS	Drain-Source Voltage	60		V
V_DGR	Drain-Gate Voltage (R_GS 1 M)	60		V
V_DSS	Gate-Source Voltage - Continuous - Nonrepetitive (t_P < 50 s)	± 20		V
		± 40
I_D	Drain Current - Continuous - Pulsed	64		A
		190
P_D	Total Power Dissipation @ T_C = 25°C Derate above 25°C	130		W
		0.87		W/
T_J,T_STG	Operating and Storage Temperature	-65 to 175
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	275

NDB7061 Features

`64A, 60V. R_DS(ON) = 0.016 @ V_GS=10V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R_DS(ON).
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.

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