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NDB7050L, NDB7051, NDB7051L

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Info of NDB7050L
Info of NDB7051
Info of NDB7051L

NDB7050L, NDB7051, NDB7051L Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:09+ D/C:09+

NDB7050L, NDB7051, NDB7051L Datasheet download

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Part Number: NDB7050L

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: 09+

D/C: 09+

Description: MOSFET N-CHAN 50V 70A D2PAK

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NDB7050L Parameters

Technical/Catalog Information	NDB7050L
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	50V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	15 mOhm @ 37.5A, 5V
Input Capacitance (Ciss) @ Vds	4000pF @ 25V
Power - Max	150W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	115nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NDB7050L NDB7050L NDB7050LCT ND NDB7050LCTND NDB7050LCT

NDB7050L General Description

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB7050L Maximum Ratings

Symbol	Parameter	NDP7050L	NDB7050L	Units
V_DSS	Drain-Source Voltage	50		V
V_DGR	Drain-Gate Voltage (R_GS 1 M)	50		V
V_GSS	Gate-Source Voltage - Continuous - Nonrepetitive (t_P < 50 µs)	± 20		V
		± 40
I_D	Drain Current - Continuous - Pulsed	75		A
		225
P_D	Total Power Dissipation @ T_C = 25°C Derate above 25°C	150		W
		1		W/
T_J,T_STG	Operating and Storage Temperature Range	-65 to 175

NDB7050L Features

`75A, 50V, R_DS(ON) = 0.015 @ V_GS = 5V
`Low drive requirements allowing operation directly from logic drivers. V_GS(TH) < 2.0V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R_DS(ON).
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.

NDB7051 Parameters

Technical/Catalog Information	NDB7051
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	50V
Current - Continuous Drain (Id) @ 25° C	70A
Rds On (Max) @ Id, Vgs	13 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds	1930pF @ 25V
Power - Max	130W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	100nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NDB7051 NDB7051

NDB7051 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB7051 Maximum Ratings

Symbol	Parameter	NDP7051	NDB7051	Units
V_DSS	Drain-Source Voltage	50		V
V_DGR	Drain-Gate Voltage (R_GS < 1 M)	50		V
V_DSS	Gate-Source Voltage - Continuous - Nonrepetitive (t_P < 50 s)	± 20		V
		± 40
I_D	Drain Current - Continuous - Pulsed	70		A
		210
P_D	Total Power Dissipation @ T_C = 25°C Derate above 25°C	130		W
		0.87		W/
T_J,T_STG	Operating and Storage Temperature	-65 to 175
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	275

NDB7051 Features

`70A, 50V. R_DS(ON) = 0.013 @ V_GS=10V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R_DS(ON).
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.

NDB7051L General Description

NDB7051L Maximum Ratings

Symbol	Parameter	NDP7051L	NDB7051L	Units
V_DSS	Drain-Source Voltage	50		V
V_DGR	Drain-Gate Voltage (R_GS 1 M)	50		V
V_GSS	Gate-Source Voltage - Continuous - Nonrepetitive (t_P < 50 µs)	±16		V
		±25
I_D	Drain Current - Continuous - Pulsed	67		A
		200
P_D	Total Power Dissipation @ T_C = 25°C Derate above 25°C	130		W
		0.87		W/
T_J,T_STG	Operating and Storage Temperature Range	-65 to 175

NDB7051L Features

`67 A, 50 V. R_DS(ON) = 0.0145 @ V_GS= 5 V
R_DS(ON) = 0.0115 @ V_GS= 10 V.
`Low drive requirements allowing operation directly from logic drivers. V_GS(TH) < 2.0V.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R_DS(ON).
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.

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