MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:. D/C:928
NDB7030L, NDB705, NDB7050 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor (VA)
Package Cooled: .
D/C: 928
Description: MOSFET N-CH 50V .015 OHM TO263
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PDF/DataSheet Download
Datasheet: NDB4050
File Size: 68582 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDB7050
File Size: 387395 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDB7050
File Size: 387395 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | NDB7050 |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Rds On (Max) @ Id, Vgs | 13 mOhm @ 40A, 10V |
| Input Capacitance (Ciss) @ Vds | 3600pF @ 25V |
| Power - Max | 150W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 115nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | NDB7050 NDB7050 NDB7050CT ND NDB7050CTND NDB7050CT |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
| Symbol |
Parameter |
NDP7050 | NDB7050 |
Units |
| VDSS | Drain-Source Voltage |
50 |
V | |
| VDGR | Drain-Gate Voltage (RGS < 1 M) |
50 |
V | |
| VDSS | Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) |
± 20 |
V | |
|
± 40 | ||||
| ID | Drain Current - Continuous - Pulsed |
75 |
A | |
|
225 | ||||
| PD | Total Power Dissipation @ TC = 25°C Derate above 25°C |
150
|
W | |
|
1 |
W/ | |||
| TJ,TSTG | Operating and Storage Temperature |
-65 to 175 |
||
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
275 |
||
`75A, 50V. RDS(ON) = 0.013 @ VGS=10V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
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