NDB608BE, NDB610A, NDB610AE Selling Leads, Datasheet
MFG:MOT/ON Package Cooled:09+ D/C:TO-
NDB608BE, NDB610A, NDB610AE Datasheet download
Part Number: NDB608BE
MFG: MOT/ON
Package Cooled: 09+
D/C: TO-
MFG:MOT/ON Package Cooled:09+ D/C:TO-
NDB608BE, NDB610A, NDB610AE Datasheet download
MFG: MOT/ON
Package Cooled: 09+
D/C: TO-
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: NDB608BE
File Size: 75673 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDB610A
File Size: 75691 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDB610AE
File Size: 75691 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Symbol |
Parameter |
NDP608A NDP608AE NDB608A NDB608AE |
NDP608B NDP608BE NDB608B NDB608BE |
Units |
VDSS |
Drain-Source Voltage |
80 |
V | |
VDGR |
Drain-Gate Voltage (RGS 1 M) |
80 |
V | |
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) |
± 20 |
V | |
± 40 | ||||
ID |
Drain Current - Continuous - Pulsed |
36 |
32 |
A |
144 |
128 | |||
PD |
Total Power Dissipation Derate above 25°C |
100 |
W | |
0.67 |
W/ | |||
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
||
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Symbol |
Parameter |
NDP610A NDP610AE NDB610A NDB610AE |
NDP610B NDP610BE NDB610B NDB610BE |
Units |
VDSS |
Drain-Source Voltage |
100 |
V | |
VDGR |
Drain-Gate Voltage (RGS 1 M) |
100 |
V | |
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) |
± 20 |
V | |
± 40 | ||||
ID |
Drain Current - Continuous - Pulsed |
26 |
24 |
A |
104 |
96 | |||
PD |
Total Power Dissipation Derate above 25°C |
100 |
W | |
0.67 |
W/ | |||
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
||
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
`26 and 24A, 100V. RDS(ON) = 0.065 and 0.080.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Symbol |
Parameter |
NDP610A NDP610AE NDB610A NDB610AE |
NDP610B NDP610BE NDB610B NDB610BE |
Units |
VDSS |
Drain-Source Voltage |
100 |
V | |
VDGR |
Drain-Gate Voltage (RGS 1 M) |
100 |
V | |
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) |
± 20 |
V | |
± 40 | ||||
ID |
Drain Current - Continuous - Pulsed |
26 |
24 |
A |
104 |
96 | |||
PD |
Total Power Dissipation Derate above 25°C |
100 |
W | |
0.67 |
W/ | |||
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
||
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
`26 and 24A, 100V. RDS(ON) = 0.065 and 0.080.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.