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These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDB6030PL Maximum Ratings
Symbol
Parameter
NDP6030PL
NDB6030PL
Units
VDSS
Drain-Source Voltage
-30
V
VGSS
Gate-Source Voltage - Continuous
± 16
V
ID
Drain Current - Continuous - Pulsed
-30
A
-90
PD
Total Power Dissipation @ TC = 25°C Derate above 25°C
75
W
0.5
W/
TJ,TSTG
Operating and Storage Temperature Range
-65 to 175
TL
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
275
TJ,TSTG
Operating and Storage Temperature Range
-65 to 175
NDB6030PL Features
`-30 A, -30 V. RDS(ON) = 0.042 @ VGS= -4.5 V RDS(ON) = 0.025 @ VGS= -10 V. `Critical DC electrical parameters specified at elevated temperature. `Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. `High density cell design for extremely low RDS(ON). `175°C maximum junction temperature rating.
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDB603AL Maximum Ratings
Symbol
Parameter
NDP603AL
NDB603AL
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage - Continuous
± 20
V
ID
Drain Current - Continuous - Pulsed
25 (Note 1)
A
100
PD
Total Power Dissipation @ TC = 25°C Derate above 25°C
50
W
0.4
W/
TJ,TSTG
Operating and Storage Temperature Range
-65 to 175
TL
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
275
NDB603AL Features
`25A, 30V. RDS(ON) = 0.022 @ VGS=10V. `Critical DC electrical parameters specified at elevated temperature. `Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. `High density cell design for extremely low RDS(ON). `175°C maximum junction temperature rating.