M2V64S20BTP-10, M2V64S20BTP-8, M2V64S20DTP Selling Leads, Datasheet
MFG:5000 Package Cooled:MIT D/C:04+
M2V64S20BTP-10, M2V64S20BTP-8, M2V64S20DTP Datasheet download
Part Number: M2V64S20BTP-10
MFG: 5000
Package Cooled: MIT
D/C: 04+
MFG:5000 Package Cooled:MIT D/C:04+
M2V64S20BTP-10, M2V64S20BTP-8, M2V64S20DTP Datasheet download
MFG: 5000
Package Cooled: MIT
D/C: 04+
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PDF/DataSheet Download
Datasheet: M2V64S20BTP-10
File Size: 690551 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: M2V64S20BTP-8
File Size: 690551 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: M2V64S20DTP
File Size: 438013 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
M2V64S20DTP is a 4-bank x 4,194,304-word x 4-bit, M2V64S30DTP is a 4-bank x 2,097,152-word x 8-bit, M2V64S40DTP is a 4-bank x 1,048,576-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. M2V64S20DTP, M2V64S30DTP and M2V64S40DTP achieve very high speed data rate up to 133MHz for -6, and are suitable for main memory or graphic memory in computer systems.
Symbol |
Parameter |
Conditions |
Ratings |
Unit |
Vdd | Supply Voltage |
with respect to Vss |
-0.5 ~ 4.6 |
V |
VddQ | Supply Voltage for Output |
with respect to VssQ |
-0.5 ~ 4.6 |
V |
VI | Input Voltage |
with respect to Vss |
-0.5 ~ Vdd+0.5 |
V |
VO | Output Voltage |
with respect to VssQ |
-0.5~ VddQ+0.5 |
V |
IO | Output Current |
50 |
mA | |
Pd | Power Dissipation |
Ta = 25 |
1000 |
mW |
Topr | Operating Temperature |
0 ~ 70 |
||
Tstg | Storage Temperature |
-65 ~ 150 |