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M2V56S20TP-6, M2V56S20TP-7, M2V56S40AKT-6LL

M2V56S20TP-6, M2V56S20TP-7, M2V56S40AKT-6LL Selling Leads, Datasheet

MFG:MIT  Package Cooled:tsop  D/C:06+

M2V56S20TP-6, M2V56S20TP-7, M2V56S40AKT-6LL Picture

M2V56S20TP-6, M2V56S20TP-7, M2V56S40AKT-6LL Datasheet download

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Part Number: M2V56S20TP-6

 

MFG: MIT

Package Cooled: tsop

D/C: 06+

 

 

 
 
 
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M2V56S20TP-6 Suppliers

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  • M2V28S40ATP-6

  • Vendor: MITSUBISHI D/C: 02+& Qty: 2000  Adddate: 2024-12-26
  • Inquire Now
  • Memory & IC Group   China
    Contact: Mr.Luo   MSN:hubert@memoryic.com
    Tel: 86-755-23937889
    Fax: 86-755-23937799
    (5)

About M2V56S20TP-6

PDF/DataSheet Download

Datasheet: M2V56S20TP-6

File Size: 249960 KB

Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

Download : Click here to Download

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M2V56S20TP-7 Suppliers

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  • M2V28S40ATP-6

  • Vendor: MITSUBISHI D/C: 02+& Qty: 2000  Adddate: 2024-12-26
  • Inquire Now
  • Memory & IC Group   China
    Contact: Mr.Luo   MSN:hubert@memoryic.com
    Tel: 86-755-23937889
    Fax: 86-755-23937799
    (5)

About M2V56S20TP-7

PDF/DataSheet Download

Datasheet: M2V56S20TP-7

File Size: 249960 KB

Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

Download : Click here to Download

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M2V56S40AKT-6LL Suppliers

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  • M2V28S40ATP-6

  • Vendor: MITSUBISHI D/C: 02+& Qty: 2000  Adddate: 2024-12-26
  • Inquire Now
  • Memory & IC Group   China
    Contact: Mr.Luo   MSN:hubert@memoryic.com
    Tel: 86-755-23937889
    Fax: 86-755-23937799
    (5)

About M2V12D20TP

PDF/DataSheet Download

Datasheet: M2V12D20TP

File Size: 772135 KB

Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

Download : Click here to Download

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M2V56S20TP-6 General Description

M2V56S20TP is a 4-bank x 16777216-word x 4-bit, M2V56S30TP is a 4-bank x 8388608-word x 8-bit, M2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40TP achieve very high speed data rate up to 100MHz (-7/-8) , 133MHz (-6), and are suitable for main memory or graphic memory in computer systems.

M2V56S20TP-6 Maximum Ratings

Symbol
Parameter
Conditions
Ratings
Unit
Vdd
Supply Voltage
with respect to Vss
-0.5 ~ 4.6
V
VddQ
Supply Voltage for Output
with respect to VssQ
-0.5 ~ 4.6
V
VI
Input Voltage
with respect to Vss
-0.5 ~ Vdd+0.5
V
VO
Output Voltage
with respect to VssQ
-0.5 ~ VddQ+0.5
V
IO
Output Current
50
mA
Pd
Power Dissipation
Ta = 25 °C
1000
mW
Topr
Operating Temperature
0 ~ 70
°C
Tstg
Storage Temperature
-65 ~ 150
°C

M2V56S20TP-6 Features

- Single 3.3v±0.3V power supply
- Max. Clock frequency 100MHz(-7/-8), 133MHz (-6)
- Fully Synchronous operation referenced to clock rising edge
- Single Data Rate
- 4 bank operation controlled by BA0, BA1 (Bank Address)
- /CAS latency- 2/3 (programmable)
- Burst length- 1/2/4/8/full page (programmable)
- Burst type- sequential / interleave (programmable)
- Random column access
- Auto precharge / All bank precharge controlled by A10
- 8192 refresh cycles /64ms (4 banks concurrent refresh)
- Auto refresh and Self refresh
- Row address A0-12 / Column address A0-9,11(x4)/ A0-9(x8)/ A0-8(x16)
- LVTTL Interface
- 400-mil, 54-pin Thin Small Outline Package (TSOP II) with 0.8mm lead pitch

M2V56S20TP-6 Connection Diagram

M2V56S20TP-7 General Description

M2V56S20TP is a 4-bank x 16777216-word x 4-bit, M2V56S30TP is a 4-bank x 8388608-word x 8-bit, M2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40TP achieve very high speed data rate up to 100MHz, and are suitable for main memory or graphic memory in computer systems.

M2V56S20TP-7 Maximum Ratings

Symbol
Parameter
Conditions
Ratings
Unit
Vdd
Supply Voltage
with respect to Vss
-0.5 ~ 4.6
V
VddQ
Supply Voltage for Output
with respect to VssQ
-0.5 ~ 4.6
V
VI
Input Voltage
with respect to Vss
-0.5 ~ Vdd+0.5
V
VO
Output Voltage
with respect to VssQ
-0.5 ~ VddQ+0.5
V
IO
Output Current
50
mA
Pd
Power Dissipation
Ta = 25 °C
1000
mW
Topr
Operating Temperature
0 ~ 70
°C
Tstg
Storage Temperature
-65 ~ 150
°C

M2V56S20TP-7 Features

- Single 3.3v±0.3V power supply
- Clock frequency 100MHz
- Fully Synchronous operation referenced to clock rising edge
- 4 bank operation controlled by BA0, BA1 (Bank Address)
- /CAS latency- 2/3 (programmable)
- Burst length- 1/2/4/8/full page (programmable)
- Burst type- sequential / interleave (programmable)
- Column access - random
- Auto precharge / All bank precharge controlled by A10
- 8192 refresh cycles /64ms (4 banks concurrent refresh)
- Auto refresh and Self refresh
- Row address A0-12 / Column address A0-9,11(x4)/ A0-9(x8)/ A0-8(x16)
- LVTTL Interface
- 400-mil, 54-pin Thin Small Outline Package (TSOP II) with 0.8mm lead pitch

M2V56S20TP-7 Connection Diagram

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