M2V56S40TP7, M2V56S50AWG-6, M2V64S20BTP Selling Leads, Datasheet
MFG:STM Package Cooled:SO56 D/C:2006
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M2V56S40TP7, M2V56S50AWG-6, M2V64S20BTP Datasheet download
Part Number: M2V56S40TP7
MFG: STM
Package Cooled: SO56
D/C: 2006
MFG:STM Package Cooled:SO56 D/C:2006
M2V56S40TP7, M2V56S50AWG-6, M2V64S20BTP Datasheet download
MFG: STM
Package Cooled: SO56
D/C: 2006
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PDF/DataSheet Download
Datasheet: M2V12D20TP
File Size: 772135 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: M2V12D20TP
File Size: 772135 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: M2V64S20BTP
File Size: 690551 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
The M2V64S20BTP is organized as 4-bank x 4194304-word x 4-bit, M2V64S30BTP is organized as 4-bank x 2097152-word x 8-bit, and M2V64S40BTP is organized as 4-bank x 1048576-word x 16-bit Synchronous DRAM with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V64S20BTP, M2V64S30BTP, M2V64S40BTP achieve very high speed data rate up to 125MHz, and are suitable for main memory or graphic memory in computer systems.
Symbol |
Parameter |
Conditions |
Ratings |
Unit |
Vdd | Supply Voltage |
with respect to Vss |
-0.5 ~ 4.6 |
V |
VddQ | Supply Voltage for Output |
with respect to VssQ |
-0.5 ~ 4.6 |
V |
VI | Input Voltage |
with respect to Vss |
-0.5 ~ Vdd+0.5 |
V |
VO | Output Voltage |
with respect to VssQ |
-0.5~ VddQ+0.5 |
V |
IO | Output Current |
50 |
mA | |
Pd | Power Dissipation |
Ta = 25 |
1000 |
mW |
Topr | Operating Temperature |
0 ~ 70 |
||
Tstg | Storage Temperature |
-65 ~ 150 |