M2V56S40TP, M2V56S40TP6, M2V56S40TP-6 Selling Leads, Datasheet
Package Cooled:TSOP D/C:TSOP
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M2V56S40TP, M2V56S40TP6, M2V56S40TP-6 Datasheet download
Part Number: M2V56S40TP
MFG: --
Package Cooled: TSOP
D/C: TSOP
Package Cooled:TSOP D/C:TSOP
M2V56S40TP, M2V56S40TP6, M2V56S40TP-6 Datasheet download
MFG: --
Package Cooled: TSOP
D/C: TSOP
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PDF/DataSheet Download
Datasheet: M2V56S40TP
File Size: 249960 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: M2V12D20TP
File Size: 772135 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: M2V56S40TP-6
File Size: 249960 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
M2V56S20TP is a 4-bank x 16777216-word x 4-bit, 2V56S30TP is a 4-bank x 8388608-word x 8-bit, 2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40TP achieve very high speed data rate up to 100MHz (-7/-8) , 133MHz (-6), and are suitable for main memory or graphic memory in computer systems.
Symbol |
Parameter |
Conditions |
Ratings |
Unit |
Vdd | Supply Voltage |
with respect to Vss |
-0.5 ~ 4.6 |
V |
VddQ | Supply Voltage for Output |
with respect to VssQ |
-0.5 ~ 4.6 |
V |
VI | Input Voltage |
with respect to Vss |
-0.5 ~ Vdd+0.5 |
V |
VO | Output Voltage |
with respect to VssQ |
-0.5~ VddQ+0.5 |
V |
IO | Output Current |
50 |
mA | |
Pd | Power Dissipation |
Ta = 25 |
1000 |
mW |
Topr | Operating Temperature |
0 ~ 70 |
||
Tstg | Storage Temperature |
-65 ~ 150 |
M2V56S20TP is a 4-bank x 16777216-word x 4-bit, M2V56S30TP is a 4-bank x 8388608-word x 8-bit, M2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40TP achieve very high speed data rate up to 100MHz (-7/-8) , 133MHz (-6), and are suitable for main memory or graphic memory in computer systems.
Symbol |
Parameter |
Conditions |
Ratings |
Unit |
Vdd |
Supply Voltage |
with respect to Vss |
-0.5 ~ 4.6 |
V |
VddQ |
Supply Voltage for Output |
with respect to VssQ |
-0.5 ~ 4.6 |
V |
VI |
Input Voltage |
with respect to Vss |
-0.5 ~ Vdd+0.5 |
V |
VO |
Output Voltage |
with respect to VssQ |
-0.5 ~ VddQ+0.5 |
V |
IO |
Output Current |
50 |
mA | |
Pd |
Power Dissipation |
Ta = 25 °C |
1000 |
mW |
Topr |
Operating Temperature |
0 ~ 70 |
°C | |
Tstg |
Storage Temperature |
-65 ~ 150 |
°C |