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M2V28S40ALT-6LL, M2V28S40ATP, M2V28S40ATP-6

M2V28S40ALT-6LL, M2V28S40ATP, M2V28S40ATP-6 Selling Leads, Datasheet

MFG:MIT  Package Cooled:SSOP  D/C:SSOP

M2V28S40ALT-6LL, M2V28S40ATP, M2V28S40ATP-6 Picture

M2V28S40ALT-6LL, M2V28S40ATP, M2V28S40ATP-6 Datasheet download

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Part Number: M2V28S40ALT-6LL

 

MFG: MIT

Package Cooled: SSOP

D/C: SSOP

 

 

 
 
 
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  • M2V28S40ATP-6

  • Vendor: MITSUBISHI D/C: 02+& Qty: 2000  Adddate: 2024-11-24
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  • Memory & IC Group   China
    Contact: Mr.Luo   MSN:hubert@memoryic.com
    Tel: 86-755-23937889
    Fax: 86-755-23937799
    (5)

About M2V12D20TP

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Datasheet: M2V12D20TP

File Size: 772135 KB

Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

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  • M2V28S40ATP-6

  • Vendor: MITSUBISHI D/C: 02+& Qty: 2000  Adddate: 2024-11-24
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  • Memory & IC Group   China
    Contact: Mr.Luo   MSN:hubert@memoryic.com
    Tel: 86-755-23937889
    Fax: 86-755-23937799
    (5)

About M2V28S40ATP

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Datasheet: M2V28S40ATP

File Size: 641965 KB

Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

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  • M2V28S40ATP-6

  • Vendor: MITSUBISHI D/C: 02+& Qty: 2000  Adddate: 2024-11-24
  • Inquire Now
  • Memory & IC Group   China
    Contact: Mr.Luo   MSN:hubert@memoryic.com
    Tel: 86-755-23937889
    Fax: 86-755-23937799
    (5)

About M2V28S40ATP-6

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Datasheet: M2V28S40ATP-6

File Size: 641965 KB

Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

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M2V28S40ATP General Description

M2V28S20ATP is organized as 4-bank x 8,388,608-word x 4-bit Synchronous DRAM with LVTTL interface and M2V28S30ATP is organized as 4-bank x 4,194,304-word x 8-bit and M2V28S40ATP is organized as 4-bank x 2,097,152-word x 16-bit. All inputs and outputs are referenced to the rising edge of CLK.

M2V28S20ATP,M2V28S30ATP,M2V28S40ATP achieves very high speed data rates up to 133MHz, and is suitable for main memory or graphic memory in computer systems.

M2V28S40ATP Maximum Ratings



Symbol
Parameter
Conditions
Ratings
Unit
Vdd Supply Voltage
with respect to Vss
-0.5 - 4.6
V
VddQ Supply Voltage for Output
with respect to VssQ
-0.5 - 4.6
V
VI Input Voltage
with respect to Vss
-0.5 - 4.6
V
VO Output Voltage
with respect to VssQ
-0.5 - 4.6
V
IO Output Current
50
mA
Pd Power Dissipation
Ta = 25
1000
mW
Topr Operating Temperature
0 ~ 70
Tstg Storage Temperature
-65 ~ 150


M2V28S40ATP Features

 · Single 3.3V ±0.3V power supply
 · Max. Clock frequency -6:PC133<3-3-3> / -7:PC100<2-2-2> / -8:PC100<3-2-2>
 · Fully synchronous operation referenced to clock rising edge
 · 4-bank operation controlled by BA0,BA1(Bank Address)
 · /CAS latency- 2/3 (programmable)
 · Burst length- 1/2/4/8/FP (programmable)
 · Burst type- Sequential and interleave burst (programmable)
 · Byte Control- DQML and DQMU (M2V28S40ATP)
 · Random column access
 · Auto precharge / All bank precharge controlled by A10
 · Auto and self refresh
 · 4096 refresh cycles /64ms
 · LVTTL Interface
 · Package  M2V28S20ATP/30ATP/40ATP  400-mil, 54-pin Thin Small Outline (TSOP II) with 0.8mm lead pitch

M2V28S40ATP Connection Diagram

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