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• International standard package • Isolation voltage 3000V (RMS) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low drain-to-case capacitance (<100 pF) - reduced RFI • Low package inductance (< 10 nH) - easy to drive and to protect • Aluminium Nitride Isolation - increased current ratings
IXTN58N50 Typical Application
• DC choppers • AC motor speed controls • DC servo and robot drives • Uninterruptible power supplies (UPS) • Switched mode and resonant mode power supplies
IXTN61N50 Maximum Ratings
Symbol
Test Conditions
Maximum
Ratings
VCES VCGR
TJ = 25 to 150 600 TJ= 25 to 150 ; RGE = 1 M
500 500
V
VGES VGEM
Transient
±20 ±30
V V
ID25 IDM
TC = 25 TC = 25, pulse width limited by TJM
58 61 232 244
AA A A A
PD
TC = 25
360
W
TJ TJM Tstg
-40 ... +150 150 -40 ... +150
°C °C °C
TL
1.6 mm (0.062 in.) from case for 10 s
300
°C
VISOL
50/60 Hz, RMS t = 1 minute t = 1s
2500 3000
V~ V~
Md
Mounting torque Terminal connection torque (M4)
1.5/13 1.5/13
Nm/lb.in. Nm/lb.in.
Weight
30
g
IXTN61N50 Features
• International standard package • Isolation voltage 3000V (RMS) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low drain-to-case capacitance (<100 pF) - reduced RFI • Low package inductance (< 10 nH) - easy to drive and to protect • Aluminium Nitride Isolation - increased current ratings
IXTN61N50 Typical Application
• DC choppers • AC motor speed controls • DC servo and robot drives • Uninterruptible power supplies (UPS) • Switched mode and resonant mode power supplies