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IXTA1N80, IXTA2N80, IXTA2N80P

Table of contents:
Info of IXTA1N80
Info of IXTA2N80
Info of IXTA2N80P

IXTA1N80, IXTA2N80, IXTA2N80P Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:TO-263 D/C:TO-

IXTA1N80, IXTA2N80, IXTA2N80P Datasheet download

Five Points

Part Number: IXTA1N80

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-263

D/C: TO-

Description: MOSFET N-CH 800V 2A TO-263

Price Break

250

Unit Price

1.33000

Extended Price

332.50

(All prices are in USD) Prices for reference only

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IXTA1N80 Parameters

Technical/Catalog Information	IXTA1N80
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	750mA
Rds On (Max) @ Id, Vgs	11 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	220pf @ 25V
Power - Max	40W
Packaging	Tube
Gate Charge (Qg) @ Vgs	8.5nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTA1N80 IXTA1N80

IXTA1N80 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
VDSS VDGR	TJ = 25°C to 150°CV TJ = 25°C to 150°C; RGS = 1 M	800 800	V V
VGS VGSM	Continuous Transient	±20 ±30	V V
ID25 IDM	TC = 25°C TC = 25°C, pulse width limited by TJM	750 3	mA mA
IAR EAR EAS	TC = 25°C TC = 25°C	1.0 5 100	A mJ mJ
dv/dt	IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150°C, RG = 47	3	V/ns
PD	TC = 25°C	40	W
TJ TJM		-55 ... +150 150 Tstg -55 ... +150	°C °C °C

IXTA2N80 Parameters

Technical/Catalog Information	IXTA2N80
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	2A
Rds On (Max) @ Id, Vgs	6.2 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	440pF @ 25V
Power - Max	54W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	22nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTA2N80 IXTA2N80

IXTA2N80 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
VC_ES V_CGR	T_J = 25°C to 150°C T_J= 25°C to 150°C; R_GE = 1 M	800 800	V V
V_GES V_GEM	Continuous Transient	±20 ±30	V V
I_D25 I_DM	T_C= 25°C T_C= 25°C, pulse width limited by TJM	2 8	A A
I_AR E_AR E_AS	T_C = 25°C T_C = 25°C	2 6 200	A mJ mJ
dv/dt	I_S I_DM, di/dt 100 A/µs, V_DD V_DSS, T_J 150°C, RG = 18 Ω	5	V/ns
P_D	T_C = 25°C	54	w
T_J T_JMT_stg		-55 ... +150 150 -55 ... +150	°C °C °C
M_d	Mounting torque	1.13/10	Nm/lb.in.
Weight		4	g
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s		300	°C

IXTA2N80 Features

· International standard packages
· Low R_{DS (on)} HDMOS^TM process
· Rugged polysilicon gate cell structure
· Low package inductance (< 5 nH)
- easy to drive and to protect
· Fast switching times

IXTA2N80 Typical Application

· Switch-mode and resonant-mode power supplies
· Flyback inverters
· DC choppers

IXTA2N80P Parameters

Technical/Catalog Information	IXTA2N80P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	2A
Rds On (Max) @ Id, Vgs	6 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	440pF @ 25V
Power - Max	70W
Packaging	Tube
Gate Charge (Qg) @ Vgs	10.6nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTA2N80P IXTA2N80P

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