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IXTA3N50P, IXTA3N60P, IXTA42N25P

Table of contents:
Info of IXTA3N50P
Info of IXTA3N60P
Info of IXTA42N25P

IXTA3N50P, IXTA3N60P, IXTA42N25P Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:TO-263 D/C:08+/09+

IXTA3N50P, IXTA3N60P, IXTA42N25P Picture

IXTA3N50P, IXTA3N60P, IXTA42N25P Datasheet download

Five Points

Part Number: IXTA3N50P

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-263

D/C: 08+/09+

Description: MOSFET N-CH 250V 42A TO-263

Price Break

550

Unit Price

.51871

Extended Price

285.29

(All prices are in USD) Prices for reference only

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IXTA3N50P Parameters

Technical/Catalog Information	IXTA3N50P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	3.6A
Rds On (Max) @ Id, Vgs	2 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	409pF @ 25V
Power - Max	70W
Packaging	Tube
Gate Charge (Qg) @ Vgs	9.3nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTA3N50P IXTA3N50P

IXTA3N50P Maximum Ratings

Symbol	Parameter	Rating	Unit
V_DSS	Drain-Source Voltage	500	V
V_DGR	T_J = 25° C to 150° C; R_GS = 1 M	500	V
V_GSS V_GSM		±30 ±40	V V
I_D25 I_DM	T_c=25 T_c=25 pulse width limited by T_JM	3.6 8	A
E_AS	T_c=25	180	mJ
I_AR	T_c=25	3	A
E_AR	T_c=25	10	mJ
dv/dt	IS I_DM, di/dt 100 A/s, V_DD V_DSS, T 150° C, R = 20	10	V/ns
T_J T_JM T_stg	Operating Junction and Storage Temperature Range	-55 ... +150 150 -55 ... +150
P_D	T_C = 25	70	W
T_L T_SOLD	1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s	300 260
M_d	Mounting torque (TO-220)	1.13/10	Nm/lb.in.
Weight	TO-220 TO-263 TO-252	4 3 0.8	g g g

IXTA3N50P Features

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
- easy to drive and to protect

IXTA3N60P Parameters

Technical/Catalog Information	IXTA3N60P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	2.9 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	411pF @ 25V
Power - Max	70W
Packaging	Tube
Gate Charge (Qg) @ Vgs	9.8nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTA3N60P IXTA3N60P

IXTA42N25P Parameters

Technical/Catalog Information	IXTA42N25P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	42A
Rds On (Max) @ Id, Vgs	84 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	2300pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	70nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTA42N25P IXTA42N25P

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