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IXTA6N50P, IXTA75N10P, IXTA7N60P

Table of contents:
Info of IXTA6N50P
Info of IXTA75N10P
Info of IXTA7N60P

IXTA6N50P, IXTA75N10P, IXTA7N60P Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:TO-263 D/C:TO-263AB

IXTA6N50P, IXTA75N10P, IXTA7N60P Datasheet download

Five Points

Part Number: IXTA7N60P

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-263

D/C: TO-263AB

Description: MOSFET N-CH 600V 7A D2-PAK

Price Break

500

Unit Price

.50400

Extended Price

252.00

(All prices are in USD) Prices for reference only

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IXTA6N50P Parameters

Technical/Catalog Information	IXTA6N50P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	6A
Rds On (Max) @ Id, Vgs	1.1 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	740pF @ 25V
Power - Max	100W
Packaging	Tube
Gate Charge (Qg) @ Vgs	14.6nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTA6N50P IXTA6N50P

IXTA75N10P Parameters

Technical/Catalog Information	IXTA75N10P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	25 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	2250pF @ 25V
Power - Max	360W
Packaging	Tube
Gate Charge (Qg) @ Vgs	74nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTA75N10P IXTA75N10P

IXTA75N10P Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_CESV_CGR	T_J = 25 to 150 600 T_J= 25 to 150 ; R_GE = 1 M	100 100	V
V_GES V_GEM	Continuous Transient	±20 ±30	V V
I_D25 I_DM	T_C= 25 T_C= 25, pulse width limited by TJM	75 200	A A A A
I_AR E_AR E_AS	T_C = 25°C T_C = 25°C T_C = 25°C	50 30 1.0	A mJ J
dv/dt	I_S I_DM, di/dt 100 A/µs, V_DD V_DSS, T_J 150°C, RG = 10 Ω	10	V/ns
P_D	T_C = 25	300	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
T_L	1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s	300 260	°C °C
M_d	Mounting torque, TO-247	1.13/10	Nm/lb.in.
Weight	TO-3P TO-220 TO-263	5.5 4 3	g g g

IXTA75N10P Features

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
- easy to drive and to protect

IXTA75N10P Typical Application

·Easy to mount
·Space savings
·High power density

IXTA7N60P Parameters

Technical/Catalog Information	IXTA7N60P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	7A
Rds On (Max) @ Id, Vgs	1.1 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	1080pF @ 25V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	20nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTA7N60P IXTA7N60P

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