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IXTA36N30P, IXTA3N110, IXTA3N120

IXTA36N30P, IXTA3N110, IXTA3N120 Selling Leads, Datasheet

MFG:IXYS  Category:Discrete Semiconductor Products  Package Cooled:2006+  D/C:05+

IXTA36N30P, IXTA3N110, IXTA3N120 Picture

IXTA36N30P, IXTA3N110, IXTA3N120 Datasheet download

Five Points

Part Number: IXTA36N30P

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: 2006+

D/C: 05+

Description: MOSFET N-CH 1.2KV 3A TO-263

Price Break

200

Unit Price

1.77570

Extended Price

355.14

(All prices are in USD) Prices for reference only
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IXTA36N30P Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-12-18
  • Inquire Now
  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
    Tel: 86-010-13910265534
    Fax: --
    (54)

About IXTA 3N120

PDF/DataSheet Download

Datasheet: IXTA 3N120

File Size: 576233 KB

Manufacturer:

Download : Click here to Download

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IXTA3N110 Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-12-18
  • Inquire Now
  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
    Tel: 86-010-13910265534
    Fax: --
    (54)

About IXTA3N110

PDF/DataSheet Download

Datasheet: IXTA3N110

File Size: 104644 KB

Manufacturer: IXYS [IXYS Corporation]

Download : Click here to Download

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IXTA3N120 Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-12-18
  • Inquire Now
  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
    Tel: 86-010-13910265534
    Fax: --
    (54)

About IXTA3N120

PDF/DataSheet Download

Datasheet: IXTA3N120

File Size: 104644 KB

Manufacturer: IXYS [IXYS Corporation]

Download : Click here to Download

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IXTA36N30P Parameters

Technical/Catalog InformationIXTA36N30P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25° C36A
Rds On (Max) @ Id, Vgs110 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 2250pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs70nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTA36N30P
IXTA36N30P

IXTA36N30P Features

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
- easy to drive and to protect

IXTA36N30P Typical Application

􀁺 ·Easy to mount
􀁺 ·Space savings
􀁺 ·High power density

IXTA3N110 Parameters

Technical/Catalog InformationIXTA3N110
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1100V (1.1kV)
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs4.5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 1350pF @ 25V
Power - Max200W
PackagingTube
Gate Charge (Qg) @ Vgs42nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTA3N110
IXTA3N110

IXTA3N110 Maximum Ratings

Symbol Test Conditions Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
3N120 1200
3N110 1100
3N120 1200
3N110 1100
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
3
12
3
A
A
A
EAR
EAS
TC = 25°C 20
700
mJ
mJ
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2 Ω
5 V/ns
PD TC = 25°C 25 W
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.063 in.) from case for 10 s 300 °C
Md Mounting torque (TO-220) 1.13/10 Nm/lb.in.
Weight TO-220
TO-263
4
2
g
g

IXTA3N110 Features

· International standard packages
· Low RDS (on)
· Rated for unclamped Inductive load Switching (UIS)
· Molding epoxies meet UL 94 V-0 flammability classification

IXTA3N110 Typical Application

· Easy to mount
· Space savings
· High power density

IXTA3N120 Parameters

Technical/Catalog InformationIXTA3N120
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs4.5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 1350pF @ 25V
Power - Max200W
PackagingTube
Gate Charge (Qg) @ Vgs42nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTA3N120
IXTA3N120

IXTA3N120 Maximum Ratings

Symbol Test Conditions Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
3N120 1200
3N110 1100
3N120 1200
3N110 1100
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
3
12
3
A
A
A
EAR
EAS
TC = 25°C 20
700
mJ
mJ
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2 Ω
5 V/ns
PD TC = 25°C 25 W
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.063 in.) from case for 10 s 300 °C
Md Mounting torque (TO-220) 1.13/10 Nm/lb.in.
Weight TO-220
TO-263
4
2
g
g

IXTA3N120 Features

· International standard packages
· Low RDS (on)
· Rated for unclamped Inductive load Switching (UIS)
· Molding epoxies meet UL 94 V-0 flammability classification

IXTA3N120 Typical Application

· Easy to mount
· Space savings
· High power density

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