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IXTA36N30P: MOSFET MOSFET N-CH 300V 36A

IXTA36N30P Data Sheet

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Part Number:: IXTA36N30P
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	300 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	36 A
Resistance Drain-Source RDS (on) :	0.11 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TO-263	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 0.11 Ohms
Continuous Drain Current : 36 A
Drain-Source Breakdown Voltage : 300 V

Features:

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
- easy to drive and to protect

Application

􀁺 ·Easy to mount
􀁺 ·Space savings
􀁺 ·High power density

Parameters:

Technical/Catalog Information	IXTA36N30P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	36A
Rds On (Max) @ Id, Vgs	110 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	2250pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	70nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTA36N30P IXTA36N30P

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IXTA36N30P

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