MOSFET 0.75 Amps 1000V 15 Rds
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Features: ·International standard packages·Low RDS (on)·Rated for unclamped Inductive load Switchi...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 1000 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 0.75 A | ||
Resistance Drain-Source RDS (on) : | 15 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263AA | Packaging : | Tube |
Technical/Catalog Information | IXTA05N100 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25° C | 750mA |
Rds On (Max) @ Id, Vgs | 17 Ohm @ 375mA, 10V |
Input Capacitance (Ciss) @ Vds | 260pF @ 25V |
Power - Max | 40W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 7.8nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTA05N100 IXTA05N100 |