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IXTA06N120P

MOSFET 0.6 Amps 1200V 32 Rds

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IXTA06N120P: MOSFET 0.6 Amps 1200V 32 Rds

IXTA06N120P Data Sheet

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Part Number:
IXTA06N120P
Mfg:
Ixys
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.6 A
Resistance Drain-Source RDS (on) : 30 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-263
Drain-Source Breakdown Voltage : 1200 V
Continuous Drain Current : 0.6 A
Resistance Drain-Source RDS (on) : 30 Ohms


Parameters:

Technical/Catalog InformationIXTA06N120P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C600mA
Rds On (Max) @ Id, Vgs32 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 270pF @ 25V
Power - Max42W
PackagingTube
Gate Charge (Qg) @ Vgs13.3nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTA06N120P
IXTA06N120P



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