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IXFX90N20Q, IXFX90N30, IXG100NA60U

Table of contents:
Info of IXFX90N20Q
Info of IXFX90N30
Info of IXG100NA60U

IXFX90N20Q, IXFX90N30, IXG100NA60U Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:IXYS D/C:07+

IXFX90N20Q, IXFX90N30, IXG100NA60U Datasheet download

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Part Number: IXFX90N20Q

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: IXYS

D/C: 07+

Description: MOSFET N-CH 300V 90A PLUS247

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IXFX90N20Q Parameters

Technical/Catalog Information	IXFX90N20Q
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	90A
Rds On (Max) @ Id, Vgs	22 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	6800pF @ 25V
Power - Max	500W
Packaging	Tube
Gate Charge (Qg) @ Vgs	190nC @ 10V
Package / Case	PLUS 247
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IXFX90N20Q IXFX90N20Q

IXFX90N20Q Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_DSS V_DGR	T_J= 25°C to 150°C T_J= 25°C to 150°C; R_GS = 1 M	300 300	V V
V_GSV_GSM	Continuous Transient	±20 ±30	V V
I_D25I_DMI_AR	T_C = 25°C T_C = 25°C, pulse widthlimited by T_JM T_C = 25°C	73 292 73	A A A
E_ARE_AS	T_C= 25°C T_C= 25°C	60 2.5	J mJ
dv/dt	I_S I_DM, di/dt 100 A/s, V_DD V_DSS T_J 150°C, R_G = 2	5	V/ns
P_D	T_C= 25°C	500	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150
T_L	1.6 mm (0.063 in.) from case for 10 s	300
M_D	Mounting torque TO-264	0.4/6	Nm/lb.in.
Weight	PLUS 247 TO-264	6 10	g

IXFX90N20Q Features

· IXYS advanced low Qg process
· Low gate charge and capacitances
- easier to drive
- faster switching
·International standard packages
· Low RDS (on)
· Rated for unclamped Inductive load witching (UIS) rated
· Molding epoxies meet UL 94 V-0 lammability classification

IXFX90N20Q Typical Application

·DC-DC converters
· Battery chargers
· Switched-mode and resonant-mode ower supplies
· DC choppers
· AC motor control
· Temperature and lighting controls

IXFX90N30 Parameters

Technical/Catalog Information	IXFX90N30
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	90A
Rds On (Max) @ Id, Vgs	33 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	10000pF @ 25V
Power - Max	560W
Packaging	Tube
Gate Charge (Qg) @ Vgs	360nC @ 10V
Package / Case	PLUS 247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFX90N30 IXFX90N30

IXFX90N30 Maximum Ratings

Symbol	Test Conditions	Maximum Ratings
V_DSS V_DGR	T_J = 25°C to 150°C T_J = 25°C to 150°C; R_GE= 1 MΩ	300 300	V V
V_GS V_GEM	Continuous Transient	±20 ±30	V V
I_D25I_D104I_DMI_AR	T_C= 25^oC, Chip capability T_C = 80^oC, limited by external leads T_C = 25^oC, pulse width limited by TJM T_C = 25°C	90 75 360 90	A A A A
E_AR E_AS	T_C= 25°C T_C = 25°C	64 3	mJ J
dv/dt	I_S I_DM, di/dt 100 A/µs, V_DD V_DSS, T_J 150°C, R_G = 2 Ω	5	V/ns
P_D	T_C = 25°C	560	W
T_J T_JM T_stg TL	1.6 mm (0.063 in.) from case for 10 s	-55 ... +150 150 -55 ... +150 300	°C °C °C °C
M_d	Mounting torque	0.4/6	Nm/lb.in. .
Weight	PLUS 247 TO-264	6 10	g g

IXFX90N30 Features

International standard packages
Low R_DS _(on) HDMOS^TM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS) rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier

IXFX90N30 Typical Application

DC-DC converters
Battery chargers
Switched-mode and resonant-mode power supplies
DC choppers
AC motor control
Temperature and lighting controls

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