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IXGB75N60BD1

IGBT Transistors 120 Amps 600V 2.3 Rds

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SeekIC No. : 00143563 Detail

IXGB75N60BD1: IGBT Transistors 120 Amps 600V 2.3 Rds

IXGB75N60BD1 Data Sheet

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Part Number:
IXGB75N60BD1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : PLUS 264-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : PLUS 264-3


Features:

• High current handling capability in holeless TO-264 package
• High frequency IGBT and antparallel FRED in one package
• New generation HDMOSTM process
• MOS Gate turn-on fordrive simplicity
• Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM


Application

• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode power supplies


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M		 600
600		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30
 V
V
Ic25
Ic90
ICM
 TC = 25°C
TC = 90°C
TC = 25°C 1 ms
 120
75
300

A
A
A


SSOA
(RBSOA)		 VGE= 15 V, TVJ = 125°C, RG = 10
Clamped inductive load, L = 100 H		 ICM =100
@ 0.8 VCES		 V/ns
Pc TC = 25°C 360 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
Weight   10 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s

 300
 °C
°C



Description

 


Parameters:

Technical/Catalog InformationIXGB75N60BD1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)120A
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 75A
Power - Max360W
Mounting TypeThrough Hole
Package / CaseISOPLUS264?
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGB75N60BD1
IXGB75N60BD1



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