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IXFB70N60Q2

MOSFET 70 Amps 600V

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SeekIC No. : 00158243 Detail

IXFB70N60Q2: MOSFET 70 Amps 600V

IXFB70N60Q2 Data Sheet

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Part Number:
IXFB70N60Q2
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 70 A
Resistance Drain-Source RDS (on) : 0.08 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : PLUS 264 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.08 Ohms
Continuous Drain Current : 70 A
Package / Case : PLUS 264


Features:

· Double metal process for low gateresistance
· Unclamped Inductive Switching (UIS)rated
· Low package inductance
  - easy to drive and to protect
· Fast intrinsic rectifier


Application

· DC-DC converters
· Switched-mode and resonant-mode power supplies, >500kHz switching
· DC choppers
· Pulse generation
· Laser drivers


Parameters:

Technical/Catalog InformationIXFB70N60Q2
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C70A
Rds On (Max) @ Id, Vgs80 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 7200pF @ 25V
Power - Max890W
PackagingTube
Gate Charge (Qg) @ Vgs265nC @ 10V
Package / CaseISOPLUS264?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFB70N60Q2
IXFB70N60Q2



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