Features: •Conforms to SOT-227B outline•Isolation voltage 3000 V~•Very high current, fast switching IGBT•Low VCE(sat)- for minimum on-state conduction losses•MOS Gate turn-on- drive simplicity•Low collector-to-case capacitance (< 50 pF)•Low package indu...
IXGE 200N60B: Features: •Conforms to SOT-227B outline•Isolation voltage 3000 V~•Very high current, fast switching IGBT•Low VCE(sat)- for minimum on-state conduction losses•MOS Gate t...
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