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IXGE200N60B

IGBT Transistors 175 Amps 600V 2.1 Rds

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SeekIC No. : 00143506 Detail

IXGE200N60B: IGBT Transistors 175 Amps 600V 2.1 Rds

IXGE200N60B Data Sheet

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Part Number:
IXGE200N60B
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Configuration : Single Dual Emitter Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : ISOPLUS 227-4 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Maximum Gate Emitter Voltage : +/- 20 V
Configuration : Single Dual Emitter
Package / Case : ISOPLUS 227-4


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