Position: Home  > All Categories> Integrated Circuits (ICs) > IXFC15N80Q

IXFC15N80Q

MOSFET 13 Amps 800V 0.65 Rds

product image

IXFC15N80Q Picture
See larger image
SeekIC No. : 00159218 Detail

IXFC15N80Q: MOSFET 13 Amps 800V 0.65 Rds

IXFC15N80Q Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IXFC15N80Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.65 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 13 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 0.65 Ohms
Package / Case : ISOPLUS 220


Features:

·Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
·Low drain to tab capacitance(<35pF)
·Low RDS (on)
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS) rated
·Fast intrinsic Rectifier


Application

·DC-DC converters
·Battery chargers
·Switched-mode and resonant-mode power supplies
·DC choppers
·AC motor control


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ		 800
800		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30
 V
V
ID25
IDM
IAR
 TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
 13
60
15		 A
A
A

EAR
EAS		 TC = 25°C
TC= 25°C		 30
1.0
mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 150°C, RG = 2 Ω		 10 V/ns
PD TC = 25°C 230 W
TJ
TJM
Tstg		   -40 ... +150
150
-40 ... +150		 °C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
VISOL
 50/60 Hz, RMS t = 1 min leads to tab
 2500
 V~
FC mounting force with clip 11...65 / 2.5...15 N/lb
Weight   2 g



Parameters:

Technical/Catalog InformationIXFC15N80Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C13A
Rds On (Max) @ Id, Vgs650 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4300pF @ 25V
Power - Max230W
PackagingTube
Gate Charge (Qg) @ Vgs90nC @ 10V
Package / CaseISOPLUS220?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFC15N80Q
IXFC15N80Q



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Crystals and Oscillators
WT325BI0030.000000
2SB49
Optical Inspection Equipment
AA924
A21K4B
Isolators
HCPL062N
HCPL316J
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
View more