MOSFET 5 Amps 800V 1.2 Rds
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Features: · Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mount...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 800 V | ||
Continuous Drain Current : | 5 A | Resistance Drain-Source RDS (on) : | 1.2 Ohms | ||
Configuration : | Single | Mounting Style : | SMD/SMT | ||
Package / Case : | ISOPLUS220 | Packaging : | Tube |
Technical/Catalog Information | IXFC10N80P |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25° C | 5A |
Rds On (Max) @ Id, Vgs | - |
Input Capacitance (Ciss) @ Vds | - |
Power - Max | 100W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | - |
Package / Case | ISOPLUS220? |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXFC10N80P IXFC10N80P |