Features: · Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation· Low drain to tab capacitance(<35pF)· Low RDS (on) HDMOSTM process· Rugged polysilicon gate cell structure· Unclamped Inductive Switching (UIS) rated· Fast ...
IXFC 96N15P: Features: · Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation· Low drain to tab capacitance(<35pF)· Low RDS (on) HDMOS...
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