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IXFC110N10P

MOSFET 55 Amps 100V 0.015 Rds

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SeekIC No. : 00153962 Detail

IXFC110N10P: MOSFET 55 Amps 100V 0.015 Rds

IXFC110N10P Data Sheet

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Part Number:
IXFC110N10P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.017 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 220 Packaging : Box    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.017 Ohms
Package / Case : ISOPLUS 220
Packaging : Box


Parameters:

Technical/Catalog InformationIXFC110N10P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs17 mOhm @ 55A, 10V
Input Capacitance (Ciss) @ Vds 3550pF @ 25V
Power - Max120W
PackagingBulk
Gate Charge (Qg) @ Vgs110nC @ 10V
Package / CaseISOPLUS220?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFC110N10P
IXFC110N10P



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