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The IRSF3011 is a three-terminal monolithic Smart Power MOSFET with built-in short circuit, over-temperature, ESD and over-voltage protections.
The on-chip protection circuit latches off the power MOSFET in case the drain current exceeds 7A or the junction temperature exceeds 165°C and keeps it off until the input is driven low. The drain-to-source voltage is actively clamped at 55V (typical), prior to the avalanche of POWER MOSFET, thus improving its performance during turn-off with inductive loads.
The input current requirements are very low (300A) which makes the IRSF3011 compatible with most existing designs based on standard power MOSFETs.
IRSF3011 Maximum Ratings
Minimum
Maximum
Units
Test Conditions
Vds,max
Continuous Drain to Source Voltage
-
50
V
Vin,max
Continuous Input Voltage
-0.3
10
Ids
Continuous Drain Current
-
self limited
Tc 25
Pd
Power Dissipation
-
30
W
EAS
Unclamped Single Pulse Inductive Energy
-
200
mJ
Vesd1
Electrostatic Discharge Voltage (Human Body Model)
-
4000
V
1000pF. 1.5k
Vesd2
Electrostatic Discharge Voltage (Machine Model)
-
1000
200pF, 0
TJop
Operating Junction Temperature Range
-55
self limited
TStg
Storage Temperature Range
-55
175
TL
Lead Temperature (Soldering, 10 seconds)
-
300
IRSF3011 Features
· Extremely Rugged for Harsh Operating Environments · Over-Temperature Protection · Over-Current Protection · Active Drain-to-Source Clamp · ESD Protection · Compatible with Standard Power MOSFET · Low Operating Input Current · Monolithic Construction