Power Driver ICs Half Brdg Drvr w/ Hi&Lw Side Outpt
IRS2003PBF: Power Driver ICs Half Brdg Drvr w/ Hi&Lw Side Outpt
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Features: • Floating channel designed for bootstrap operation• Fully operational to +2...
Product : | Half-Bridge Drivers | Type : | High and Low Side | ||
Rise Time : | 170 ns | Fall Time : | 90 ns | ||
Supply Voltage - Max : | 20 V | Supply Voltage - Min : | 10 V | ||
Supply Current : | 0.27 mA | Maximum Power Dissipation : | 1 W | ||
Maximum Operating Temperature : | + 125 C | Mounting Style : | Through Hole | ||
Package / Case : | PDIP-8 | Packaging : | Tube |
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage arameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Symbol | Definition | Min. | Max. | Units | |
VB | High-side floating absolute voltage | -0.3 | 225 | V | |
VS | High-side floating supply offset voltage | VB - 25 | VB + 0.3 | ||
VHO | High-side floating output voltage | VS - 0.3 | VB + 0.3 | ||
VCC | Low-side and logic fixed supply voltage | -0.3 | 25 | ||
VLO | Low-side output voltage | -0.3 | VCC + 0.3 | ||
VIN | Logic input voltage (HIN & LIN) | -0.3 | VCC + 0.3 | ||
dVs/dt | Allowable offset supply voltage transient | - | 50 | V/ns | |
PD | Package power dissipation @ TA +25 | (8 Lead PDIP) | - | 1.0 | W |
(8 Lead SOIC) | - | 0.625 | |||
RthJA | Thermal resistance, junction to ambient | (8 Lead PDIP) | - | 125 | /W |
(8 Lead SOIC) | - | 200 | |||
TJ | Junction temperature | - | 150 | ||
TS | Storage temperature | -55 | 150 | ||
TL | Lead temperature (soldering, 10 seconds) | - | 300 |
The IRS2003PBF is designed as one kind of high voltage, high speed power MOSFET and IGBT driver IRS2003PBF that has some points of features:(1)Floating channel designed for bootstrap operation; (2)Fully operational to +600 V; (3)Tolerant to negative transient voltage, dV/dt immune; (4)Gate drive supply range from 10 V to 20 V; (5)?Undervoltage lockout for both channels; (6)3.3 V, 5 V, and 15 V input logic compatible; (7)Cross-conduction prevention logic; (8)Matched propagation delay for both channels; (9)High-side output in phase with HIN input; (10)Low-side output out of phase with LIN input; (11)Logic and power ground +/- 5 V offset; (12)Internal 540 ns deadtime, and programmable up to 5 us with one external RDT resistor (IRS21084); (13)Lower di/dt gate driver for better noise immunity.
The absolute maximum ratings of the IRS2003PBF can be summarized as:(1)High side floating absolute voltage: -0.3 V to 625 V;(2)High side floating supply offset voltage: VB-25 to VB+0.3 V;(3)High side floating output voltage: VS-0.3 to VB+0.3 V;(4)Low side and logic fixed supply voltage: -0.3 to 25 V;(5)Low side output voltage: -0.3 to VCC+0.3;(6)Logic input voltage (HIN & LIN): VSS-0.3 to VDD+0.3 V;(7)Allowable offset supply voltage transient: 50 V/ns;(8)Junction temperature: 150 °C;(9)Storage temperature: -50 to 150 °C;(10)Lead temperature (soldering, 10 seconds): 300 °C.
The electrical characteristics of IRS2003PBF can be summarized as:(1)High level output voltage: 0.05 to 0.2 V;(2)Low level output voltage: 0.02 to 0.10 V;(3)Offset supply leakage current: 50 uA;(4)Quiescent VBS supply current: 20 to 130 uA;(5)Quiescent VCC Supply Current: 400 to 1600 uA.etc. If you want to know more information about the IRS2003PBF, please download the datasheet in www.seekic.com or www.chinaicmart.com .
Technical/Catalog Information | IRS2003PBF |
Vendor | International Rectifier |
Category | Integrated Circuits (ICs) |
Configuration | Half Bridge |
Voltage - Supply | 10 V ~ 20 V |
Current - Peak | 290mA |
Delay Time | 680ns |
Package / Case | 8-DIP |
Packaging | Tube |
Number of Outputs | 2 |
Input Type | Inverting and Non-Inverting |
Number of Configurations | 1 |
Operating Temperature | -40°C ~ 125°C |
High Side Voltage - Max (Bootstrap) | 200V |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRS2003PBF IRS2003PBF |