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The IRS2003 is a high voltage, high speed power MOSFET and IGBT drivers with dependent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver rossconduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 200 V.
IRS2003SPBF Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage arameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
Min.
Max.
Units
VB
High-side floating absolute voltage
-0.3
225
V
VS
High-side floating supply offset voltage
VB - 25
VB + 0.3
VHO
High-side floating output voltage
VS - 0.3
VB + 0.3
VCC
Low-side and logic fixed supply voltage
-0.3
25
VLO
Low-side output voltage
-0.3
VCC + 0.3
VIN
Logic input voltage (HIN & LIN)
-0.3
VCC + 0.3
dVs/dt
Allowable offset supply voltage transient
-
50
V/ns
PD
Package power dissipation @ TA +25
(8 Lead PDIP)
-
1.0
W
(8 Lead SOIC)
-
0.625
RthJA
Thermal resistance, junction to ambient
(8 Lead PDIP)
-
125
/W
(8 Lead SOIC)
-
200
TJ
Junction temperature
-
150
TS
Storage temperature
-55
150
TL
Lead temperature (soldering, 10 seconds)
-
300
IRS2003SPBF Features
• Floating channel designed for bootstrap operation • Fully operational to +200 V • Tolerant to negative transient voltage, dV/dt immune • Gate drive supply range from 10 V to 20 V • Undervoltage lockout • 3.3 V, 5 V, and 15 V logic compatible • Cross-conduction prevention logic • Matched propagation delay for both channels • Internal set deadtime • High-side output in phase with HIN input • Low-side output out of phase with LIN input • RoHS compliant